Parametric results for: Op Amp under Operational Amplifiers
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AZV358MM-G1
Diodes-BCD
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Check for Price | Transferred | 9 mV | 1 V/us | 500 nA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | 6 V | INDUSTRIAL | 1000 | S-PDSO-G8 | Not Qualified | 63 dB | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | TSSOP | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 3 mm | 3 mm | BCD SEMICONDUCTOR MANUFACTURING LTD | MSOP | TSSOP, | 8 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||
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AZV358M-G1
Diodes-BCD
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Check for Price | Transferred | 9 mV | 1 V/us | 500 nA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | 6 V | INDUSTRIAL | 1000 | R-PDSO-G8 | Not Qualified | 63 dB | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 1.75 mm | 3.9 mm | 4.9 mm | BCD SEMICONDUCTOR MANUFACTURING LTD | SOIC | SOP, | 8 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||
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AZV358G-E1
Diodes Incorporated
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Check for Price | Yes | Active | 9 mV | 1 V/us | 500 nA | 615 µA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | VOLTAGE-FEEDBACK | 250 nA | YES | NO | NO | YES | NO | NO | 6 V | INDUSTRIAL | 1000 | 10000 | NO | R-PDSO-G8 | Not Qualified | e3 | 63 dB | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | TUBE | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 3 mm | 4.4 mm | DIODES INC | SOIC | TSSOP, TSSOP8,.25 | 8 | compliant | EAR99 | 8542.33.00.01 | ||
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AZV358GTR-E1
Diodes-BCD
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Check for Price | Transferred | 9 mV | 1 V/us | 500 nA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | 6 V | INDUSTRIAL | 1000 | R-PDSO-G8 | Not Qualified | 63 dB | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 3 mm | 4.4 mm | BCD SEMICONDUCTOR MANUFACTURING LTD | SOIC | TSSOP, | 8 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||
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AZV358MTR-E1
Diodes-BCD
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Check for Price | Transferred | 9 mV | 1 V/us | 500 nA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | 6 V | INDUSTRIAL | 1000 | R-PDSO-G8 | Not Qualified | 63 dB | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 1.75 mm | 3.9 mm | 4.9 mm | BCD SEMICONDUCTOR MANUFACTURING LTD | SOIC | SOP, | 8 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||
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AZV358GTR-G1
Diodes Incorporated
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Check for Price | Yes | End Of Life | 9 mV | 1 V/us | 500 nA | 615 µA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | VOLTAGE-FEEDBACK | 250 nA | YES | NO | NO | YES | NO | NO | 6 V | INDUSTRIAL | 1000 | 10000 | NO | R-PDSO-G8 | Not Qualified | e3 | 63 dB | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | TAPE AND REEL | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 3 mm | 4.4 mm | DIODES INC | SOIC | TSSOP, TSSOP8,.25 | 8 | compliant | EAR99 | 8542.33.00.01 | ||
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AZV358GTR-G1
Diodes-BCD
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Check for Price | Transferred | 9 mV | 1 V/us | 500 nA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | 6 V | INDUSTRIAL | 1000 | R-PDSO-G8 | Not Qualified | 63 dB | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 3 mm | 4.4 mm | BCD SEMICONDUCTOR MANUFACTURING LTD | SOIC | TSSOP, | 8 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||
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AZV358M-E1
Diodes-BCD
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Check for Price | Transferred | 9 mV | 1 V/us | 500 nA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | 6 V | INDUSTRIAL | 1000 | R-PDSO-G8 | Not Qualified | 63 dB | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 1.75 mm | 3.9 mm | 4.9 mm | BCD SEMICONDUCTOR MANUFACTURING LTD | SOIC | SOP, | 8 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||
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AZV358MMTR-E1
Diodes-BCD
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Check for Price | Transferred | 9 mV | 1 V/us | 500 nA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | 6 V | INDUSTRIAL | 1000 | S-PDSO-G8 | Not Qualified | 63 dB | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | TSSOP | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 3 mm | 3 mm | BCD SEMICONDUCTOR MANUFACTURING LTD | MSOP | TSSOP, | 8 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||
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AZV358MMTR-E1
Diodes Incorporated
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Check for Price | Yes | Active | 9 mV | 1 V/us | 500 nA | 615 µA | 2 | OPERATIONAL AMPLIFIER | 5 V | BICMOS | VOLTAGE-FEEDBACK | 250 nA | YES | NO | NO | YES | NO | NO | 6 V | INDUSTRIAL | 1000 | 10000 | NO | S-PDSO-G8 | Not Qualified | e3 | 63 dB | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | TAPE AND REEL | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 3 mm | 3 mm | DIODES INC | MSOP | TSSOP, TSSOP8,.19 | 8 | compliant | EAR99 | 8542.33.00.01 |