Filter Your Search
1 - 10 of 25 results
|
HFA1112IP
Rochester Electronics LLC
|
Check for Price | No | Active | 35 mV | 850 MHz | 1500 V/us | 35 µA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDIP-T8 | COMMERCIAL | e0 | NOT APPLICABLE | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | DUAL | ROCHESTER ELECTRONICS LLC | DIP | 8 | unknown | ||||||||||||||||
|
HFA1112IB
Rochester Electronics LLC
|
Check for Price | No | Active | 35 mV | 850 MHz | 1500 V/us | 35 µA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDSO-G8 | COMMERCIAL | e0 | 1 | 85 °C | -40 °C | 240 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | DUAL | ROCHESTER ELECTRONICS INC | SOIC | 8 | unknown | SOP, | ||||||||||||||
|
HFA1112MJ/883
Rochester Electronics LLC
|
Check for Price | Active | 850 MHz | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 6 V | MILITARY | R-CDIP-T8 | MILITARY | 125 °C | -55 °C | 8 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | DUAL | ROCHESTER ELECTRONICS INC | DIP | 8 | unknown | , | |||||||||||||||||||||||||
|
HFA1112IBZ
Rochester Electronics LLC
|
Check for Price | Yes | Yes | Active | 850 MHz | 1500 V/us | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDSO-G8 | COMMERCIAL | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 3.9 mm | 4.9 mm | ROCHESTER ELECTRONICS LLC | SOIC | 8 | unknown | ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 | |||||||||||
|
HFA1112IJ
Rochester Electronics LLC
|
Check for Price | No | No | Active | 35 mV | 850 MHz | 1500 V/us | 35 µA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 50 mA | 6 V | INDUSTRIAL | R-GDIP-T8 | COMMERCIAL | e0 | NOT SPECIFIED | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | CERAMIC, GLASS-SEALED | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | DUAL | ROCHESTER ELECTRONICS INC | DIP | 8 | unknown | , | ||||||||||||||
|
HFA1112IPZ
Intersil Corporation
|
$3.9861 | Yes | Obsolete | 35 mV | 850 MHz | 1500 V/us | 65 µA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 7.62 mm | 9.585 mm | INTERSIL CORP | PDIP, SOIC | 8, 8 | compliant | PLASTIC, MS-001-BA, DIP-8 | EAR99 | 8542.33.00.01 | |||||||||||
|
HFA1112IB96
Intersil Corporation
|
Check for Price | No | Transferred | 35 mV | 850 MHz | 1500 V/us | 35 µA | 33 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 35 µA | -6 V | 50 mA | 800 V/us | 6 V | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | GULL WING | 1.27 mm | DUAL | INTERSIL CORP | SOIC | 8 | not_compliant | SOIC-8 | EAR99 | 8542.33.00.01 | ||||||||||
|
HFA1112IB
Harris Semiconductor
|
Check for Price | No | Transferred | 35 mV | 850 MHz | 1500 V/us | 35 µA | 33 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 35 µA | -6 V | 50 mA | 800 V/us | 6 V | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | GULL WING | 1.27 mm | DUAL | HARRIS SEMICONDUCTOR | unknown | SOP, SOP8,.25 | EAR99 | 8542.33.00.01 | ||||||||||||
|
HFA1112IP
Harris Semiconductor
|
Check for Price | No | Transferred | 35 mV | 850 MHz | 1500 V/us | 35 µA | 33 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 35 µA | -6 V | 50 mA | 800 V/us | 6 V | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | HARRIS SEMICONDUCTOR | unknown | DIP-8 | EAR99 | 8542.33.00.01 | ||||||||||||
|
HFA1112MJ/883
Harris Semiconductor
|
Check for Price | No | Transferred | 35 mV | 850 MHz | 33 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 35 µA | -6 V | 6 V | MILITARY | R-CDIP-T8 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 8 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | HARRIS SEMICONDUCTOR | unknown | DIP-8 | EAR99 | 8542.33.00.01 |