Parametric results for: 2n7000 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Pulsed Drain Current-Max (IDM) Surface Mount Configuration (2)

SINGLE 13 Single 3

17 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

17 hits Apply

Drain Current-Max (Abs) (ID) (1)

200 mA 3

17 hits Apply

Drain Current-Max (ID) (4)

75 mA 1 115 mA 1 200 mA 10 300 mA 1

Min (A) - Max (A)

17 hits Apply

Drain-source On Resistance-Max (1)

2 Ω 1

17 hits Apply

METAL-OXIDE SEMICONDUCTOR 16

17 hits Apply

5 pF 1

17 hits Apply

TO-92 1

17 hits Apply

O-PBCY-T3 1

17 hits Apply

e0 7 e3 1

17 hits Apply

Manufacturer (12)

Exar Corporation 1 Fairchild Semiconductor Corporation 1 Freescale Semiconductor 3 HSMC Corporation 1 North American Philips Discrete Products Div 1 Philips Semiconductors 2 Shantou Huashan Electronic Devices Co Ltd 1 Sipex Corporation 2 Telcom Semiconductor Inc 1 Topaz Semiconductor 1 Unisonic Technologies Co Ltd 1 Vishay Intertechnologies 2

17 hits Apply

Number of Elements (1)

1 13

17 hits Apply

Number of Terminals (1)

3 1

17 hits Apply

ENHANCEMENT MODE 16

17 hits Apply

150.0 °C 16

17 hits Apply

-55.0 °C 1

17 hits Apply

PLASTIC/EPOXY 1

17 hits Apply

ROUND 1

17 hits Apply

CYLINDRICAL 1

17 hits Apply

Active 1 Contact Manufacturer 1 Obsolete 11 Transferred 4

17 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 16

17 hits Apply

400 mW 15 830 mW 1

Min (W) - Max (W)

17 hits Apply

500 mA 1

17 hits Apply

Surface Mount (1)

NO 15

17 hits Apply