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1 - 10 of 158 results
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2N7000
Calogic Inc
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Check for Price | No | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-W3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | ROUND | CYLINDRICAL | WIRE | BOTTOM | CALOGIC LLC | TO-92 | PLASTIC, TO-226AA, 3 PIN | 3 | compliant | EAR99 | 8541.21.00.95 | ||||||||||
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2N7000RLRPG
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-92 | O-PBCY-T3 | e1 | COMMERCIAL | 260 | 40 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN SILVER COPPER | THROUGH-HOLE | BOTTOM | ROCHESTER ELECTRONICS LLC | TO-92 | LEAD FREE, CASE 29-11, TO-226, 3 PIN | 3 | unknown | CASE 29-11 | ||||||||||||
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2N7000RLRA
Motorola Semiconductor Products
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | THROUGH-HOLE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | 8541.21.00.95 | ||||||||||||
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2N7000G
Rochester Electronics LLC
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-92 | O-PBCY-W3 | AEC-Q101 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | ROUND | CYLINDRICAL | WIRE | BOTTOM | ROCHESTER ELECTRONICS LLC | unknown | EAR99 | ||||||||||||||||
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2N7000-T92-R
Unisonic Technologies Co Ltd
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-W3 | e0 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | UNISONIC TECHNOLOGIES CO LTD | TO-92 | TO-92, 3 PIN | 3 | compliant | EAR99 | ||||||||||||||||
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2N7000
Motorola Mobility LLC
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | THROUGH-HOLE | BOTTOM | MOTOROLA INC | TO-92 | CYLINDRICAL, O-PBCY-T3 | 3 | unknown | EAR99 | 8541.21.00.95 | ||||||||||
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2N7000_D26Z
onsemi
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | onsemi | ||||||||||||
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CMT2N7000
Champion Microelectronic Corp
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Check for Price | Contact Manufacturer | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | TO-92 | O-PBCY-W3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | WIRE | BOTTOM | CHAMPION MICROELECTRONIC CORP | CYLINDRICAL, O-PBCY-W3 | unknown | EAR99 | |||||||||||||||||
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2N7000_D74Z
onsemi
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | onsemi | ||||||||||||
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2N7000-G
Microchip Technology Inc
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$0.3571 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | HIGH INPUT IMPEDANCE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.39.00.01 | Microchip |