Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Sorted By: FET Technology
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ISL73024SEHML
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 125 °C -55 °C SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC , 4 J4.A compliant EAR99 Renesas Electronics
ISL73024SEHX/SAMPLE
Renesas Electronics Corporation
Check for Price No Active N-CHANNEL YES SINGLE 7 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N7 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP PFL ISLDUMMY00 compliant EAR99 Renesas Electronics
ISL73024SEHL/PROTO
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 125 °C -55 °C SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC 4 J4.A compliant EAR99 Renesas Electronics
ISL73024SEHMX
Renesas Electronics Corporation
Check for Price No No Active N-CHANNEL YES SINGLE 7 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N7 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP DIE , ISLDUMMY00 compliant EAR99 Renesas Electronics
EPC7014UBC
Micross Components
Check for Price Active N-CHANNEL YES SINGLE 3 60 V 1 1 A 580 mΩ HIGH RELIABILITY 0.1 pF HIGH ELECTRON MOBILITY DEPLETION MODE SWITCHING GALLIUM NITRIDE R-PDSO-N3 MIL-STD-750 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NO LEAD DUAL MICROSS COMPONENTS unknown
EPC7014UBSH
Micross Components
Check for Price Active N-CHANNEL YES SINGLE 3 60 V 1 1 A 580 mΩ HIGH RELIABILITY 0.1 pF HIGH ELECTRON MOBILITY DEPLETION MODE SWITCHING GALLIUM NITRIDE R-PDSO-N3 MIL-PRF-19500; MIL-STD-750; RH - 1000K Rad(Si) 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NO LEAD DUAL MICROSS COMPONENTS unknown
ISL70024SEHMX
Renesas Electronics Corporation
Check for Price No No Active N-CHANNEL YES SINGLE 7 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N7 RH - 100K Rad(Si) 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP DIE , ISLDUMMY00 compliant EAR99 Renesas Electronics
ISL70024SEHX/SAMPLE
Renesas Electronics Corporation
Check for Price No Active N-CHANNEL YES SINGLE 7 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N7 RH - 100K Rad(Si) 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP PFL ISLDUMMY00 compliant EAR99 Renesas Electronics
ISL70024SEHL/PROTO
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 RH - 100K Rad(Si) 125 °C -55 °C SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC 4 J4.A compliant EAR99 Renesas Electronics
ISL70024SEHML
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 200 V 1 7.5 A 110 mΩ HIGH RELIABILITY 1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 RH - 100K Rad(Si) 125 °C -55 °C SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC , 4 J4.A compliant EAR99 Renesas Electronics