Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Surface Mount: YES Sorted By: Risk Rank
Select parts from the table below to compare.
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2N7002
onsemi
$0.2041 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23, 3 PIN 318-08 compliant EAR99 onsemi
BSS138
onsemi
$0.1099 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 220 mA 6 Ω LOGIC LEVEL COMPATIBLE 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23, 3 PIN 318-08 compliant EAR99 onsemi
BSS84
onsemi
$0.2211 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi
BSS123
onsemi
$0.1071 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW 360 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23, 3 PIN 318-08 compliant EAR99 onsemi 8541.21.00.95 1996-09-01
2N7002-7-F
SPC Multicomp
$0.0453 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW 200 mW SWITCHING SILICON R-PDSO-G3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL MULTICOMP PRO SOT-23, 3 PIN unknown EAR99 8541.21.00.95
2N7002LT3G
onsemi
$0.0459 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi SOT-23 (TO-236) 3 LEAD 3
2N7002LT1G
onsemi
$0.0479 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi 8541.21.00.95 SOT-23 (TO-236) 3 LEAD 3
BSS138LT3G
onsemi
$0.1199 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI ROHS COMPLIANT, CASE 318-08, 3 PIN 318-08 compliant EAR99 onsemi SOT-23 (TO-236) 3 LEAD 3
BSS138LT1G
onsemi
$0.1258 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI ROHS COMPLIANT, CASE 318-08, 3 PIN 318-08 compliant EAR99 onsemi SOT-23 (TO-236) 3 LEAD 3
2N7002ET1G
onsemi
$0.0485 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 260 mA 2.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 318-08 compliant EAR99 onsemi SOT-23 (TO-236) 3 LEAD 3