Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Polarity/Channel Type: P-CHANNEL Sorted By: Risk Rank
Select parts from the table below to compare.
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BSS84
onsemi
$0.2122 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi
BSS84DW-7-F
Diodes Incorporated
$0.0768 Yes Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 50 V 2 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G6 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 6 8541.21.00.95
NTR1P02LT3G
onsemi
$0.1678 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 1.3 A 220 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi 3 SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND LEAD FREE, MINIATURE, CASE 318-08, 3 PIN
BSS84DWQ-7
Diodes Incorporated
$0.1183 Yes Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 50 V 2 130 mA 10 Ω HIGH RELIABILITY 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G6 e3 AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99
BSS84-7-F
Diodes Incorporated
$0.0646 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω HIGH RELIABILITY, LOW THRESHOLD 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 3
NTR1P02LT1G
onsemi
$0.1209 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 1.3 A 220 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi 3 SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND LEAD FREE, MINIATURE, CASE 318-08, 3 PIN
BSS84LT1G
onsemi
$0.1284 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi 3 SOT-23 (TO-236) 3 LEAD ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN
BSS84W-7-F
Diodes Incorporated
$0.1157 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω LOW CAPACITANCE 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 3
MIC94053YC6-TR
Microchip Technology Inc
$0.6122 Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 6 6 V 1 2 A 180 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 270 mW SWITCHING SILICON R-PDSO-G6 e4 Not Qualified 150 °C -40 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NICKEL PALLADIUM GOLD GULL WING DUAL MICROCHIP TECHNOLOGY INC compliant EAR99 Microchip 8542.39.00.01 LEAD FREE, SC-70, 6 PIN
MMBFJ175LT1G
onsemi
$0.1920 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 1 60 mA 125 Ω 5.5 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 225 mW 225 mW CHOPPER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi 3 8541.21.00.95 SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 1994-05-01