Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Collector Current-Max (IC) Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Pulsed Drain Current-Max (IDM) Surface Mount

AVALANCHE RATED 2 CMOS COMPATIBLE 3 ESD PROTECTED 3 ESD PROTECTION 1 FAST SWITCHING, LOW THRESHOLD 1 HIGH RELIABILITY 57 HIGH RELIABILITY, LOW THRESHOLD 1 LOGIC LEVEL COMPATIBLE 43 LOW THRESHOLD 35 ULTRA LOW RESISTANCE 17 ULTRA-LOW RESISTANCE 11

882 hits Apply

9.0 mJ 1 156.0 mJ 1

Min (mJ) - Max (mJ)

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DRAIN 90 DRAIN SOURCE 1 ISOLATED 1

882 hits Apply

Collector Current-Max (IC) (3)

100 mA 1 500 mA 1 3 A 1

Min (A) - Max (A)

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Configuration (9)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1 COMMON SOURCE, 2 ELEMENTS 1 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 129 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 12 SERIES, 2 ELEMENTS WITH BUILT-IN DIODE 2 SINGLE 34 SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 3 SINGLE WITH BUILT-IN DIODE 569 SINGLE WITH BUILT-IN DIODE AND RESISTOR 24

882 hits Apply

DC Current Gain-Min (hFE) (2)

100.0 2 270.0 1

Min - Max

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DS Breakdown Voltage-Min (24)

8 V 6 12 V 29 14 V 1 15 V 1 16 V 4 20 V 231 30 V 235 40 V 29 45 V 19 50 V 31 55 V 2 60 V 88 75 V 2 80 V 4 100 V 22 150 V 8 190 V 2 200 V 18 240 V 5 250 V 13 450 V 1 700 V 3 800 V 3 950 V 1

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

10 A 1

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Drain Current-Max (ID) (50)

1 mA 6 100 mA 30 115 mA 18 130 mA 10 150 mA 14 200 mA 17 225 mA 6 250 mA 5 280 mA 8 300 mA 20 320 mA 6 340 mA 7 350 mA 8 500 mA 12 660 mA 8 750 mA 6 1.2 A 8 1.5 A 6 1.7 A 8 1.9 A 7 2 A 17 2.2 A 6 2.3 A 12 2.5 A 22 2.7 A 8 2.9 A 13 3 A 22 3.2 A 10 3.5 A 10 3.6 A 7 3.9 A 6 4 A 14 4.1 A 8 4.2 A 7 4.4 A 9 4.5 A 21 4.9 A 6 5 A 10 5.3 A 9 6 A 11 6.5 A 6 7 A 6 7.1 A 8 8 A 7 9.5 A 6 10 A 7 11 A 9 12 A 7 14 A 6 17 A 9

Min (A) - Max (A)

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Drain-source On Resistance-Max (50)

3.3 mΩ 6 4.2 mΩ 5 4.5 mΩ 6 7 mΩ 8 9 mΩ 5 10 mΩ 5 11 mΩ 8 12 mΩ 6 23 mΩ 6 25 mΩ 11 30 mΩ 8 31 mΩ 5 32 mΩ 10 33 mΩ 6 35 mΩ 9 38 mΩ 5 42 mΩ 5 45 mΩ 11 50 mΩ 15 57 mΩ 8 60 mΩ 17 65 mΩ 5 70 mΩ 6 75 mΩ 5 77 mΩ 8 78 mΩ 5 82 mΩ 7 85 mΩ 8 90 mΩ 11 100 mΩ 17 105 mΩ 8 190 mΩ 5 250 mΩ 9 270 mΩ 5 350 mΩ 9 385 mΩ 5 400 mΩ 13 700 mΩ 8 1.2 Ω 15 1.4 Ω 7 1.6 Ω 15 2 Ω 7 2.5 Ω 7 3 Ω 24 5 Ω 30 7 Ω 8 8 Ω 13 10 Ω 13 12 Ω 8 14 Ω 10

Min (Ω) - Max (Ω)

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JUNCTION 13 METAL-OXIDE SEMICONDUCTOR 763

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2 pF 4 2.4 pF 4 2.5 pF 2 3.6 pF 1 4 pF 6 4.2 pF 2 4.6 pF 1 5 pF 45 5.37 pF 2 6 pF 2 7 pF 2 8 pF 10 10 pF 12 12 pF 11 15 pF 21 16 pF 1 18 pF 2 19 pF 1 20 pF 7 21 pF 1 22 pF 2 25 pF 1 26 pF 1 28 pF 4 32 pF 2 37 pF 4 40 pF 1 45 pF 8 45.9 pF 1 47 pF 1 50 pF 1 55 pF 2 56 pF 1 57.7 pF 2 60 pF 3 65 pF 11 70 pF 3 75 pF 5 80 pF 2 100 pF 2 105 pF 4 128 pF 2 130 pF 2 135 pF 2 140 pF 7 200 pF 5 260 pF 4 300 pF 4 391 pF 2 870 pF 2

Min (pF) - Max (pF)

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MO-187AA 5 MO-193AA 23 MO-193C 4 MO-240AA 1 MS-012AA 33 TO-206AA 2 TO-220AB 1 TO-236 20 TO-236AB 83 TO-243AA 8 TO-251AA 3 TO-261AA 4 TO-92 2

882 hits Apply

O-MBCY-W3 2 O-PBCY-T3 2 R-CDSO-N4 10 R-PBCC-N3 20 R-PDFP-F3 1 R-PDSO-C8 2 R-PDSO-F3 26 R-PDSO-F5 3 R-PDSO-F6 47 R-PDSO-F8 23 R-PDSO-G3 257 R-PDSO-G4 19 R-PDSO-G6 125 R-PDSO-G8 147 R-PDSO-N5 2 R-PSFM-T3 1 R-PSIP-T3 3 R-PSSO-F3 9 R-PSSO-G2 15 R-PSSO-G3 2 R-XBCC-N3 7 R-XDSO-C8 2 R-XXUC-N 4 S-PBGA-B4 2 S-PDSO-F5 3 S-PDSO-F8 1 S-PDSO-G8 6 S-PDSO-N3 3 S-PDSO-N5 10 S-PDSO-N6 3 S-PDSO-N8 2 S-XBGA-B4 4 S-XDSO-N6 2

882 hits Apply

e0 23 e1 19 e2 15 e3 485 e4 11 e6 9

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Manufacturer (21)

Alpha & Omega Semiconductor 4 Comchip Technology Corporation Ltd 7 Diodes Incorporated 101 Fairchild Semiconductor Corporation 1 Infineon Technologies AG 25 KEC 12 Micro Commercial Components 11 Microchip Technology Inc 1 Nexperia 108 onsemi 14 Panasonic Electronic Components 1 PanJit Semiconductor 78 Renesas Electronics Corporation 50 ROHM Semiconductor 91 STMicroelectronics 2 Taiwan Semiconductor 2 Toshiba America Electronic Components 104 TT Electronics Power and Hybrid / Semelab Limited 6 TT Electronics Resistors 6 Vishay Intertechnologies 150 Vishay Siliconix 108

882 hits Apply

1 568 3 5

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Number of Elements (2)

1 630 2 145

Min - Max

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Number of Terminals (6)

2 15 3 333 4 35 5 18 6 176 8 184

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DEPLETION MODE 14 ENHANCEMENT MODE 751

882 hits Apply

125.0 °C 4 150.0 °C 533 175.0 °C 2

Min (°C) - Max (°C)

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-65.0 °C 6 -55.0 °C 198 -50.0 °C 3 -40.0 °C 4

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 10 METAL 2 PLASTIC/EPOXY 734 UNSPECIFIED 19

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RECTANGULAR 725 ROUND 4 SQUARE 36

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CHIP CARRIER 27 CYLINDRICAL 4 FLANGE MOUNT 1 FLATPACK 1 GRID ARRAY 6 IN-LINE 3 SMALL OUTLINE 719 UNCASED CHIP 4

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Not Recommended 882

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No 9 Yes 249

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240 1 260 491 NOT SPECIFIED 207

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Polarity/Channel Type (3)

N-CHANNEL 469 N-CHANNEL AND P-CHANNEL 30 P-CHANNEL 277

882 hits Apply

150 mW 2 200 mW 1 250 mW 3 330 mW 1 350 mW 6 400 mW 1 1 W 1 1.25 W 1

Min (W) - Max (W)

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100 mW 4 150 mW 23 175 mW 4 200 mW 25 225 mW 2 250 mW 13 270 mW 5 275 mW 3 280 mW 9 300 mW 5 330 mW 2 340 mW 2 350 mW 12 400 mW 6 440 mW 2 470 mW 4 500 mW 8 530 mW 2 700 mW 3 750 mW 9 800 mW 9 850 mW 2 900 mW 5 950 mW 2 960 mW 4 1 W 21 1.08 W 2 1.1 W 3 1.14 W 10 1.25 W 18 1.3 W 5 1.5 W 2 1.66 W 4 1.95 W 2 2 W 24 2.1 W 4 2.2 W 6 2.5 W 45 2.77 W 6 2.97 W 3 3 W 23 3.1 W 10 3.3 W 4 3.5 W 16 4.2 W 4 5 W 4 5.2 W 4 6.25 W 4 6.5 W 6 20 W 6

Min (W) - Max (W)

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7 A 1 7.6 A 2 9.4 A 1 18 A 2 20 A 5 22.6 A 1 30 A 2 80 A 2 220 A 1

Min (A) - Max (A)

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Surface Mount (2)

NO 9 YES 767

882 hits Apply