Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Pulsed Drain Current-Max (IDM) Surface Mount

LOGIC LEVEL COMPATIBLE 4

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DRAIN 7

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Configuration (7)

COMPLEX 1 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 1 SINGLE 6 SINGLE WITH BUILT-IN DIODE 22 SINGLE WITH BUILT-IN DIODE AND RESISTOR 2

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DS Breakdown Voltage-Min (8)

12 V 1 20 V 5 25 V 1 28 V 1 30 V 13 40 V 2 100 V 1 500 V 1

Min (V) - Max (V)

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Drain Current-Max (ID) (23)

260 µA 1 370 µA 1 120 mA 1 150 mA 1 250 mA 1 500 mA 1 1.8 A 1 2.2 A 1 2.35 A 1 3.9 A 2 5 A 1 5.2 A 1 6 A 1 7.6 A 1 8 A 1 8.3 A 1 9.5 A 1 11 A 1 12 A 3 13 A 1 18 A 2 21 A 1 26 A 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (23)

4.5 mΩ 1 6.5 mΩ 1 7.4 mΩ 1 12.6 mΩ 1 12.9 mΩ 1 13.9 mΩ 1 14 mΩ 1 16.5 mΩ 1 19.3 mΩ 1 22.1 mΩ 1 24 mΩ 1 29 mΩ 3 30 mΩ 1 60 mΩ 1 75 mΩ 1 83 mΩ 1 100 mΩ 1 190 mΩ 1 335 mΩ 1 1.4 Ω 1 2.2 Ω 1 10 Ω 1 18 Ω 1

Min (Ω) - Max (Ω)

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JUNCTION 8 METAL-OXIDE SEMICONDUCTOR 26

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3 pF 6 80 pF 1 81 pF 1 100 pF 1 125 pF 1 200 pF 1 220 pF 1 270 pF 1

Min (pF) - Max (pF)

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TO-236 6

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R-PDSO-F3 2 R-PDSO-F4 1 R-PDSO-F5 2 R-PDSO-F6 2 R-PDSO-F8 2 R-PDSO-G3 7 R-PDSO-G6 4 R-PDSO-G8 8 R-PSSO-F3 1 R-XBCC-N6 1 R-XDSO-C8 2 S-PDSO-F5 3

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e0 6 e3 5 e4 1 e6 4

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Manufacturer (2)

onsemi 12 Toshiba America Electronic Components 29

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1 10

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Number of Elements (2)

1 30 2 5

Min - Max

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Number of Terminals (5)

3 10 4 1 5 5 6 7 8 12

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DEPLETION MODE 8 DUAL GATE, ENHANCEMENT MODE 1 ENHANCEMENT MODE 25

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125.0 °C 8 150.0 °C 6

Min (°C) - Max (°C)

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-55.0 °C 1

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PLASTIC/EPOXY 32 UNSPECIFIED 3

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RECTANGULAR 32 SQUARE 3

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CHIP CARRIER 1 SMALL OUTLINE 34

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Lifetime Buy 41

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No 6 Yes 12

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240 6 260 6

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Polarity/Channel Type (3)

N-CHANNEL 26 N-CHANNEL AND P-CHANNEL 1 P-CHANNEL 7

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350 mW 1 700 mW 1 1 W 1 1.3 W 1 2.5 W 1

Min (W) - Max (W)

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20 A 1

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Surface Mount (1)

YES 35

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