Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Pulsed Drain Current-Max (IDM) Surface Mount

AVALANCHE RATED 1 ESD PROTECTED 3 ESD PROTECTION 2 FAST SWITCHING 1 HIGH RELIABILITY 2 LOGIC LEVEL COMPATIBLE 29 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 2 LOW INSERTION LOSS 1 LOW LEAKAGE CURRENT 1 LOW NOISE 5 LOW THRESHOLD 2 ULTRA LOW RESISTANCE 5 ULTRA-LOW RESISTANCE 2

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0.58 mJ 1 5.37 mJ 1 7.8 mJ 3 13.6 mJ 2 23.4 mJ 1 28.8 mJ 1 52.0 mJ 1 63.0 mJ 1 75.0 mJ 1 78.0 mJ 1 96.0 mJ 1 115.0 mJ 1 162.0 mJ 1 205.0 mJ 1 1500.0 mJ 1

Min (mJ) - Max (mJ)

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DRAIN 113 DRAIN SOURCE 15 GATE 2 SOURCE 2

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Configuration (14)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 9 COMMON GATE, 3 ELEMENTS WITH BUILT-IN RESISTOR 4 COMMON SOURCE, 2 ELEMENTS 1 COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1 COMPLEX 1 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 63 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 8 SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 9 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1 SERIES, 2 ELEMENTS WITH BUILT-IN DIODE 7 SINGLE 31 SINGLE WITH BUILT-IN DIODE 345 SINGLE WITH BUILT-IN DIODE AND RESISTOR 18

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DS Breakdown Voltage-Min (22)

6 V 3 12 V 21 20 V 128 25 V 17 28 V 1 30 V 176 33 V 6 35 V 1 40 V 17 43 V 1 50 V 5 60 V 50 80 V 2 100 V 12 150 V 2 200 V 4 250 V 1 300 V 4 450 V 1 500 V 4 600 V 5 700 V 1

Min (V) - Max (V)

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Drain Current-Max (ID) (50)

10 mA 4 50 mA 6 80 mA 4 100 mA 9 170 mA 6 200 mA 4 210 mA 3 220 mA 6 350 mA 4 500 mA 17 520 mA 4 1 A 10 1.2 A 8 1.3 A 5 1.5 A 8 1.8 A 4 2 A 15 2.5 A 9 2.8 A 6 3 A 13 3.2 A 8 3.5 A 13 3.7 A 4 4 A 10 4.5 A 7 4.7 A 5 5 A 5 5.5 A 4 6 A 10 6.1 A 5 6.5 A 6 7 A 9 7.2 A 4 7.3 A 5 7.5 A 6 8 A 5 9 A 6 11 A 13 12 A 6 13 A 11 15 A 6 17 A 6 17.5 A 4 18 A 26 20 A 5 22 A 4 27 A 5 30 A 5 36 A 5 75 A 6

Min (A) - Max (A)

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Drain-source On Resistance-Max (50)

4 mΩ 3 5 mΩ 5 5.5 mΩ 3 6.1 mΩ 3 7 mΩ 5 7.5 mΩ 3 8 mΩ 6 8.5 mΩ 3 9 mΩ 4 10 mΩ 4 10.6 mΩ 3 13 mΩ 6 13.5 mΩ 4 14 mΩ 4 15 mΩ 3 18 mΩ 5 19 mΩ 4 20 mΩ 4 21 mΩ 4 22 mΩ 7 23 mΩ 5 29 mΩ 6 30 mΩ 3 36 mΩ 4 38 mΩ 4 40 mΩ 4 43 mΩ 3 50 mΩ 3 54 mΩ 4 55 mΩ 4 60 mΩ 4 62 mΩ 3 70 mΩ 5 83 mΩ 4 90 mΩ 5 95 mΩ 7 100 mΩ 4 120 mΩ 5 160 mΩ 8 190 mΩ 4 200 mΩ 5 250 mΩ 4 260 mΩ 4 600 mΩ 6 900 mΩ 4 1.2 Ω 6 3 Ω 4 4 Ω 6 6 Ω 5 12 Ω 5

Min (Ω) - Max (Ω)

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JUNCTION 11 METAL SEMICONDUCTOR 1 METAL-OXIDE SEMICONDUCTOR 491

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1.4 pF 1 2.74 pF 1 3 pF 3 5 pF 2 6 pF 1 7 pF 1 8.5 pF 1 10 pF 1 12 pF 1 15 pF 5 23 pF 2 25 pF 2 27 pF 1 28 pF 3 30 pF 5 36 pF 1 38 pF 1 40 pF 4 41 pF 1 42 pF 3 45 pF 3 46 pF 1 47 pF 1 50 pF 3 51 pF 1 55 pF 4 60 pF 1 70 pF 4 75 pF 1 77 pF 1 80 pF 6 83 pF 1 85 pF 1 88 pF 1 90 pF 5 95 pF 1 100 pF 5 104 pF 1 115 pF 3 120 pF 2 122 pF 1 125 pF 1 135 pF 2 150 pF 7 170 pF 3 180 pF 3 220 pF 3 230 pF 4 370 pF 2 450 pF 2

Min (pF) - Max (pF)

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MO-193AA 7 MO-229 1 MO-229VCCC 5 MO-240AA 3 MS-012AA 2 TO-206AA 1 TO-206AC 1 TO-236 9 TO-236AB 11 TO-251 3 TO-251AA 5 TO-251AB 1 TO-252 3 TO-252AA 7 TO-252AB 3 TO-92 10

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O-MBCY-W3 2 O-PBCY-T3 8 O-PBCY-W3 2 R-CBCC-N15 1 R-PBCC-N3 2 R-PBGA-B4 2 R-PBGA-B6 5 R-PDIP-T8 2 R-PDSO-C8 1 R-PDSO-F3 23 R-PDSO-F5 12 R-PDSO-F6 28 R-PDSO-F8 38 R-PDSO-G3 67 R-PDSO-G4 5 R-PDSO-G5 2 R-PDSO-G6 57 R-PDSO-G8 94 R-PDSO-N12 3 R-PDSO-N6 12 R-PDSO-N8 1 R-PQFP-N7 1 R-PSFM-T3 1 R-PSIP-T3 9 R-PSSO-F3 17 R-PSSO-G2 15 R-XBCC-N4 1 R-XBCC-N8 1 R-XDSO-C8 1 S-PBCC-N3 1 S-PBGA-B4 11 S-PDSO-F5 17 S-PDSO-F8 1 S-PDSO-N3 8 S-PDSO-N6 20 S-XDSO-N5 4 S-XDSO-N6 3

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e0 78 e1 9 e2 1 e3 196 e4 28 e6 52

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Manufacturer (15)

Alpha & Omega Semiconductor 1 Central Semiconductor Corp 2 Infineon Technologies AG 11 Microchip Technology Inc 1 Monolithic Power Systems 8 Nexperia 31 onsemi 266 PanJit Semiconductor 2 Renesas Electronics Corporation 81 ROHM Semiconductor 4 STMicroelectronics 1 Toshiba America Electronic Components 175 TT Electronics Resistors 1 Vishay Intertechnologies 12 Vishay Siliconix 3

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1 302 2 1

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Number of Elements (3)

1 396 2 101 3 4

Min - Max

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Number of Terminals (9)

12 3 15 1 2 15 3 140 4 19 5 35 6 125 7 1 8 139

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DEPLETION MODE 10 ENHANCEMENT MODE 464

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125.0 °C 11 150.0 °C 354 175.0 °C 27

Min (°C) - Max (°C)

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-65.0 °C 1 -55.0 °C 75 -40.0 °C 1

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 1 METAL 2 PLASTIC/EPOXY 465 UNSPECIFIED 10

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RECTANGULAR 401 ROUND 12 SQUARE 65

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CHIP CARRIER 6 CYLINDRICAL 12 FLANGE MOUNT 1 FLATPACK 1 GRID ARRAY 18 IN-LINE 11 SMALL OUTLINE 429

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End Of Life 599

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No 43 Yes 299

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240 2 260 289 NOT SPECIFIED 83

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Polarity/Channel Type (3)

N-CHANNEL 296 N-CHANNEL AND P-CHANNEL 19 P-CHANNEL 188

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100 mW 4 200 mW 2 350 mW 1 540 mW 2 1 W 3 1.5 W 4 2.5 W 1

Min (W) - Max (W)

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100 mW 9 150 mW 3 200 mW 14 300 mW 9 360 mW 5 380 mW 2 400 mW 2 500 mW 17 540 mW 3 625 mW 4 700 mW 5 750 mW 6 755 mW 2 800 mW 16 900 mW 8 960 mW 2 1 W 22 1.25 W 12 1.3 W 3 1.35 W 5 1.4 W 6 1.5 W 9 1.53 W 2 1.6 W 10 1.65 W 3 1.7 W 9 1.9 W 14 2 W 18 2.1 W 2 2.2 W 5 2.3 W 3 2.4 W 8 2.5 W 36 3 W 2 3.8 W 2 3.83 W 2 4.9 W 2 15 W 2 20.2 W 2 20.8 W 2 23 W 2 26 W 2 30 W 4 35 W 3 36 W 4 40 W 3 43.1 W 2 50 W 2 65 W 2 138 W 4

Min (W) - Max (W)

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5.4 A 1 11 A 3 12 A 2 18 A 1 20 A 2 22 A 1 24 A 1 24.4 A 1 27 A 2 33 A 1 36 A 1 40 A 1 50 A 4 62 A 1 68 A 1 75 A 1 85 A 1 130 A 1 136 A 1 153.6 A 1 180 A 1 200 A 1 225 A 1

Min (A) - Max (A)

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Surface Mount (2)

NO 25 YES 480

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