Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Fall Time-Max (tf) Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 ESD PROTECTION 1 HIGH RELIABILITY 40 HIGH RELIABILITY, LOW NOISE 8 LOW DRIFT 6 LOW INSERTION LOSS 2 LOW INSERTION LOSS, LOW NOISE 8 LOW NOISE 111 LOW NOISE, LOW INSERTION LOSS 4 LOW THRESHOLD, HIGH INPUT IMPEDANCE 50 ULTRA HIGH INPUT IMPEDANCE 10 ULTRA LOW NOISE 11 ULTRA LOW RESISTANCE 14 ULTRA-LOW RESISTANCE 4

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DRAIN 13 GATE 49 ISOLATED 6 SOURCE 4 SUBSTRATE 1

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Collector Current-Max (IC) (1)

100 mA 1

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Configuration (19)

2 BANKS, COMMON SOURCE, 4 ELEMENTS 4 2 BANKS, COMMON SUBSTRATE, 2 ELEMENTS 6 COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 4 COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE 3 COMMON SOURCE, 2 ELEMENTS 11 COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE 1 COMMON SUBSTRATE, 2 ELEMENTS 34 COMMON SUBSTRATE, 4 ELEMENTS 14 COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 1 COMPLEX 148 SEPARATE, 2 ELEMENTS 144 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 42 SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 6 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 1 SINGLE 640 SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR 3 SINGLE WITH BUILT-IN DIODE 183 SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR 3 SINGLE WITH BUILT-IN DIODE AND RESISTOR 1

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DC Current Gain-Min (hFE) (1)

68.0 1

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DS Breakdown Voltage-Min (26)

8 V 1 10 V 5 10.6 V 21 12 V 50 13.5 V 1 15 V 4 16 V 2 20 V 103 22 V 4 25 V 23 30 V 75 35 V 6 40 V 121 50 V 84 55 V 1 60 V 66 80 V 2 90 V 10 100 V 19 150 V 2 200 V 4 240 V 1 250 V 1 350 V 1 600 V 11 700 V 2

Min (V) - Max (V)

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Drain Current-Max (ID) (50)

1.7 mA 2 12 mA 4 25 mA 3 30 mA 13 35 mA 2 50 mA 26 60 mA 2 75 mA 2 100 mA 19 115 mA 12 130 mA 2 150 mA 2 160 mA 5 200 mA 24 220 mA 2 250 mA 9 260 mA 3 300 mA 11 310 mA 4 340 mA 4 390 mA 4 450 mA 2 500 mA 11 600 mA 4 660 mA 2 710 mA 2 770 mA 4 800 mA 3 1 A 6 1.2 A 3 1.3 A 4 1.5 A 3 1.7 A 4 1.8 A 2 2 A 4 2.1 A 5 2.5 A 9 3 A 9 3.2 A 4 3.5 A 4 3.6 A 6 3.9 A 3 4 A 3 4.6 A 3 5 A 3 6 A 7 7 A 4 8 A 3 9 A 4 10 A 7

Min (A) - Max (A)

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Drain-source On Resistance-Max (50)

12 mΩ 3 13.5 mΩ 4 18 mΩ 3 20 mΩ 3 23 mΩ 4 28 mΩ 5 30 mΩ 4 50 mΩ 4 55 mΩ 4 57 mΩ 5 65 mΩ 4 70 mΩ 7 75 mΩ 3 79 mΩ 3 85 mΩ 3 112 mΩ 3 120 mΩ 3 150 mΩ 3 600 mΩ 10 1 Ω 3 1.5 Ω 7 2.5 Ω 6 3 Ω 7 5 Ω 13 6 Ω 5 7 Ω 5 7.5 Ω 4 8 Ω 11 9.4 Ω 4 10 Ω 5 12 Ω 9 18 Ω 8 25 Ω 7 30 Ω 24 40 Ω 5 50 Ω 17 60 Ω 12 70 Ω 6 75 Ω 37 85 Ω 12 100 Ω 32 125 Ω 6 150 Ω 26 200 Ω 7 250 Ω 12 270 Ω 10 300 Ω 22 500 Ω 14 800 Ω 5 1.8 kΩ 16

Min (Ω) - Max (Ω)

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JUNCTION 1,063 METAL-OXIDE SEMICONDUCTOR 443

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33 ns 1

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0.1 pF 9 0.5 pF 5 0.6 pF 3 0.7 pF 7 0.8 pF 1 1 pF 10 1.2 pF 28 1.3 pF 16 1.5 pF 288 1.7 pF 3 2 pF 48 2.5 pF 3 3 pF 47 3.5 pF 11 4 pF 10 4.2 pF 1 4.5 pF 3 5 pF 106 6 pF 3 6.8 pF 4 7 pF 42 7.5 pF 2 8 pF 12 9 pF 3 10 pF 22 12 pF 1 13 pF 1 15 pF 25 16 pF 1 20 pF 10 25 pF 1 28 pF 1 30 pF 2 42 pF 1 45 pF 2 49 pF 1 50 pF 5 59 pF 1 60 pF 1 73 pF 1 90 pF 2 91 pF 1 100 pF 1 115 pF 1 134 pF 1 150 pF 2 151 pF 1 153 pF 1 175 pF 1 203 pF 1

Min (pF) - Max (pF)

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MO-153AA 1 MO-229VECC 1 MS-012AA 7 TO-18 86 TO-205AF 2 TO-206AA 6 TO-206AF 4 TO-220AB 1 TO-226 7 TO-226AA 23 TO-236 143 TO-236AB 12 TO-257AA 2 TO-263AB 1 TO-276AA 1 TO-276AB 1 TO-39 11 TO-46 8 TO-5 5 TO-52 11 TO-71 56 TO-72 54 TO-78 51 TO-92 102

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O-MBCY-T4 1 O-MBCY-W3 127 O-MBCY-W4 63 O-MBCY-W6 127 O-MBCY-W7 6 O-MBCY-W8 17 O-PBCY-T3 87 O-PBCY-W3 31 O-XBCY-T3 5 O-XBCY-W3 1 O-XBCY-W6 1 O-XBCY-W8 3 O-XBCY-X6 1 R-CDIP-T14 3 R-CDIP-T8 6 R-GDIP-T14 2 R-GDIP-T8 3 R-PDIP-T14 9 R-PDIP-T16 5 R-PDIP-T8 96 R-PDSO-F3 10 R-PDSO-F5 3 R-PDSO-F8 4 R-PDSO-G14 10 R-PDSO-G16 5 R-PDSO-G3 388 R-PDSO-G4 2 R-PDSO-G5 4 R-PDSO-G6 21 R-PDSO-G8 131 R-PSFM-T3 1 R-PSIP-W3 4 R-PSSO-F3 1 R-PSSO-G2 1 R-XBCC-N3 2 R-XSFM-P3 2 S-CDSO-G8 2 S-PDSO-F8 2 S-PDSO-N3 1 S-PDSO-N6 1 S-PDSO-N8 1 S-XXUC-X4 1 X-XXUC-N 6

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e0 109 e1 2 e3 93 e4 6

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Manufacturer (58)

Advanced Linear Devices Inc 91 Advanced Power Electronics Corp 65 American Power Devices Inc 27 Analog Power 21 Berex Corp 1 Boca Semiconductor Inc 1 Bytesonic Corporation 2 Champion Microelectronic Corp 2 CHENMKO Enterprise Co Ltd 2 Cissoid S A 2 CRYSTALONICS Inc 35 Cyg Wayon Circuit Protection Co Ltd 1 DC Components Co Ltd 1 EDI Diodes (Electronic Devices Inc) 10 Efficient Power Conversion 3 ELM Technology Corp 84 Fairchild Semiconductor Corporation 1 Force Mos Technology Co Ltd 2 Fortune Semiconductor Corp 2 General Transistor Corp 3 Globaltech Semiconductor Co Ltd 1 Hi-Tron Semiconductor Corp 10 HY Electronic Corp 2 Infinex 1 InterFET Corporation 359 Isahaya Electronics Corporation 41 Jiangsu Changjiang Electronics Technology Co Ltd 36 Kodenshi Corporation 18 Kodenshi Sensing 16 Linear Integrated Systems 394 Lision Technology Inc 2 LRC Leshan Radio Co Ltd 40 Micro Electronics Corporation 3 Micro Electronics Ltd 2 Micross Components 144 New Jersey Semiconductor Products Inc 131 Niko Semicondutor Co Ltd 1 onsemi 12 Prisemi Electronics 3 Renesas Electronics Corporation 14 Rochester Electronics LLC 26 Secos Corporation 157 Semicoa Semiconductors 3 Semiconductors Inc 31 Shantou Huashan Electronic Devices Co Ltd 1 Sino Wealth Electronic Ltd 1 Sinopower Semiconductor Inc 12 Solid State Inc 2 Swampscott Electronics Co Inc 3 Sync Power Corp 1 Transistor & Electronic Co 1 UPI Semiconductor Corp 6 WEITRON INTERNATIONAL CO., LTD. 18 Western Digital Corp 1 Will Semiconductor Ltd 110 Wuxi China Resources Huajing Microelectronics Co 2 X-REL Semiconductor Sas 16 Yangzhou Yangjie Electronics Co Ltd 2

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1 80

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Number of Elements (3)

1 854 2 414 4 32

Min - Max

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Number of Terminals (9)

14 24 16 10 2 1 3 661 4 67 5 7 6 151 7 6 8 265

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DEPLETION MODE 954 DUAL GATE, ENHANCEMENT MODE 1 ENHANCEMENT MODE 390

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70.0 °C 21 85.0 °C 3 125.0 °C 19 135.0 °C 75 150.0 °C 605 175.0 °C 7 200.0 °C 120

Min (°C) - Max (°C)

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-65.0 °C 1 -55.0 °C 75 -40.0 °C 3 0.0 °C 11

Min (°C) - Max (°C)

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CERAMIC, GLASS-SEALED 5 CERAMIC, METAL-SEALED COFIRED 11 METAL 341 PLASTIC/EPOXY 819 UNSPECIFIED 22

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RECTANGULAR 714 ROUND 470 SQUARE 8 UNSPECIFIED 6

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CHIP CARRIER 2 CYLINDRICAL 470 FLANGE MOUNT 3 IN-LINE 128 SMALL OUTLINE 588 UNCASED CHIP 7

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Contact Manufacturer 1,979

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No 128 Yes 170

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245 1 260 16 NOT SPECIFIED 240

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Polarity/Channel Type (3)

N-CHANNEL 1,172 N-CHANNEL AND P-CHANNEL 15 P-CHANNEL 319

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150 mW 9 200 mW 10 225 mW 1 250 mW 1 270 mW 1 350 mW 2 360 mW 4 400 mW 1 450 mW 5 500 mW 10 830 mW 3 1.8 W 9

Min (W) - Max (W)

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100 mW 6 112 mW 1 125 mW 4 150 mW 14 200 mW 18 225 mW 19 250 mW 40 270 mW 1 300 mW 83 310 mW 11 340 mW 1 350 mW 29 360 mW 37 375 mW 8 380 mW 3 400 mW 46 450 mW 5 500 mW 73 625 mW 1 750 mW 6 800 mW 6 830 mW 9 900 mW 1 1 W 2 1.2 W 1 1.3 W 7 1.4 W 1 1.5 W 1 1.8 W 8 2 W 2 2.1 W 1 3 W 1 3.1 W 3 23.2 W 1 69.44 W 1 86.2 W 3

Min (W) - Max (W)

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Surface Mount (2)

NO 714 YES 671

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