Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

EUROPEAN PART NUMBER 9 HIGH INPUT IMPEDANCE 7 LOGIC LEVEL COMPATIBLE 8 LOW THRESHOLD 6

224 hits Apply

Configuration (4)

SINGLE 67 Single 2 SINGLE WITH BUILT-IN DIODE 153 SINGLE WITH BUILT-IN DIODE AND RESISTOR 2

224 hits Apply

DS Breakdown Voltage-Min (1)

60 V 214

224 hits Apply

Drain Current-Max (Abs) (ID) (1)

200 mA 2

224 hits Apply

Drain Current-Max (ID) (6)

115 mA 13 200 mA 190 210 mA 1 300 mA 11 350 mA 1 500 mA 2

Min (A) - Max (A)

224 hits Apply

Drain-source On Resistance-Max (8)

1.8 Ω 2 2 Ω 1 5 Ω 190 5.3 Ω 1 5.4 Ω 2 5.5 Ω 2 6 Ω 4 7.5 Ω 12

Min (Ω) - Max (Ω)

224 hits Apply

METAL-OXIDE SEMICONDUCTOR 224

224 hits Apply

5 pF 161 10 pF 5

Min (pF) - Max (pF)

224 hits Apply

TO-226AA 9 TO-92 162

224 hits Apply

O-PBCY-T3 165 O-PBCY-W3 26 R-CDSO-N3 6 R-PSIP-W3 7 R-PSSO-G3 8 X-XUUC-N 1 X-XUUC-N3 1

224 hits Apply

e0 48 e1 12 e3 18 e4 4

224 hits Apply

Manufacturer (39)

Bytesonic Corporation 1 Calogic Inc 13 Champion Microelectronic Corp 1 Comchip Technology Corporation Ltd 1 Continental Device India Ltd 1 Diodes Incorporated 12 Exar Corporation 1 Fairchild Semiconductor Corporation 40 Freescale Semiconductor 2 InterFET Corporation 1 Jiangsu Changjiang Electronics Technology Co Ltd 1 KEC 3 Lite-On Semiconductor Corporation 1 Micro Commercial Components 1 Microchip Technology Inc 8 Motorola Mobility LLC 12 Motorola Semiconductor Products 12 National Semiconductor Corporation 2 North American Philips Discrete Products Div 1 NXP Semiconductors 5 onsemi 15 Philips Semiconductors 2 Rochester Electronics LLC 9 STMicroelectronics 1 Supertex Inc 21 Taiwan Semiconductor 2 TDK Micronas GmbH 1 Telcom Semiconductor Inc 1 Teledyne Technologies Inc 1 Temic Semiconductors 4 Texas Instruments 13 Topaz Semiconductor 1 TT Electronics Power and Hybrid / Semelab Limited 4 TT Electronics Resistors 4 Unisonic Technologies Co Ltd 13 Vishay Intertechnologies 1 Vishay Semiconductors 1 Vishay Siliconix 2 Zetex / Diodes Inc 9

224 hits Apply

1 1 NOT APPLICABLE 2 NOT SPECIFIED 3

224 hits Apply

Number of Elements (1)

1 222

224 hits Apply

Number of Terminals (1)

3 213

224 hits Apply

ENHANCEMENT MODE 224

224 hits Apply

150.0 °C 150 200.0 °C 7

Min (°C) - Max (°C)

224 hits Apply

-55.0 °C 34

224 hits Apply

CERAMIC, METAL-SEALED COFIRED 6 PLASTIC/EPOXY 206 UNSPECIFIED 2

224 hits Apply

RECTANGULAR 21 ROUND 191 UNSPECIFIED 2

224 hits Apply

CYLINDRICAL 191 IN-LINE 7 SMALL OUTLINE 14 UNCASED CHIP 2

224 hits Apply

Active 42 Contact Manufacturer 4 Obsolete 137 Transferred 41

224 hits Apply

No 7 Yes 19

224 hits Apply

235 4 240 4 260 7 NOT APPLICABLE 2 NOT SPECIFIED 20

224 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 224

224 hits Apply

350 mW 24 400 mW 3 625 mW 2

Min (W) - Max (W)

224 hits Apply

350 mW 9 400 mW 50 625 mW 2 830 mW 2 1 W 5

Min (W) - Max (W)

224 hits Apply

Surface Mount (2)

NO 204 YES 20

224 hits Apply