Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BAIS RESISTOR RATIO IS 1 1

9 hits Apply

Collector Current-Max (IC) (1)

100 mA 1

9 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 9

9 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 1

9 hits Apply

DS Breakdown Voltage-Min (1)

50 V 2

9 hits Apply

Drain Current-Max (ID) (2)

1 mA 6 100 mA 2

Min (A) - Max (A)

9 hits Apply

JUNCTION 6 METAL-OXIDE SEMICONDUCTOR 2

9 hits Apply

R-PDSO-F3 6 R-PDSO-G3 3

9 hits Apply

e3 1

9 hits Apply

Manufacturer (4)

Panasonic Electronic Components 2 SANYO Electric Co Ltd 3 SANYO Semiconductor Co Ltd 3 Yangzhou Yangjie Electronics Co Ltd 1

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

3 9

9 hits Apply

DEPLETION MODE 6 ENHANCEMENT MODE 2

9 hits Apply

150.0 °C 6

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 9

9 hits Apply

SMALL OUTLINE 9

9 hits Apply

Active 1 Obsolete 5 Transferred 3

9 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 8 NPN 1

9 hits Apply

200 mW 1

9 hits Apply

100 mW 2 200 mW 1

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 1

9 hits Apply