Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Configuration: SINGLE WITH BUILT-IN DIODE Sorted By: Risk Rank
Select parts from the table below to compare.
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2N7002
onsemi
$0.2041 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23, 3 PIN 318-08 compliant EAR99 onsemi
BSS138
onsemi
$0.1099 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 220 mA 6 Ω LOGIC LEVEL COMPATIBLE 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23, 3 PIN 318-08 compliant EAR99 onsemi
BSS84
onsemi
$0.2211 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi
BS170
onsemi
$0.1532 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 5 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-226AA O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM ONSEMI TO-92, 3 PIN 135AN compliant EAR99 onsemi TO-92 3
BSS123
onsemi
$0.1071 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW 360 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23, 3 PIN 318-08 compliant EAR99 onsemi 8541.21.00.95 1996-09-01
2N7002-7-F
SPC Multicomp
$0.0453 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW 200 mW SWITCHING SILICON R-PDSO-G3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL MULTICOMP PRO SOT-23, 3 PIN unknown EAR99 8541.21.00.95
2N7000
onsemi
$0.2010 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω LOGIC LEVEL COMPATIBLE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ONSEMI TO-226, 3 PIN 135AN compliant EAR99 onsemi TO-92 3
2N7000-D26Z
onsemi
$0.1812 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM ONSEMI 135AR compliant EAR99 onsemi
2N7000-D74Z
onsemi
$0.1741 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM ONSEMI 135AR compliant EAR99 onsemi
2N7000-D75Z
onsemi
$0.1673 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM ONSEMI 135AR compliant EAR99 onsemi