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1 - 6 of 6 results
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2N7000
onsemi
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$0.2010 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | 240 | 30 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | ONSEMI | TO-92 | TO-226, 3 PIN | 3 | 135AN | compliant | EAR99 | onsemi | ||||
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2N7000-D26Z
onsemi
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$0.1812 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | ONSEMI | 135AR | compliant | EAR99 | onsemi | ||||||||||
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2N7000-D74Z
onsemi
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$0.1741 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | ONSEMI | 135AR | compliant | EAR99 | onsemi | ||||||||||
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2N7000-D75Z
onsemi
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$0.1673 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | ONSEMI | 135AR | compliant | EAR99 | onsemi | ||||||||||
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2N7000-G
Microchip Technology Inc
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$0.3571 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | HIGH INPUT IMPEDANCE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | Microchip | 8542.39.00.01 | |||||||||
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2N7000RLRA
onsemi
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$0.1522 | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | 235 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | TO-92 (TO-226) 5.33mm Body Height | CASE 29-11, TO-226, 3 PIN | 3 | 29-11 | not_compliant | EAR99 | onsemi |