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SSM3K15AFS,LF(T
Toshiba America Electronic Components
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$0.0260 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 30 V | 1 | 100 mA | 6 Ω | 6.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 mW | 100 mW | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | unknown | EAR99 | 8541.21.00.95 | Toshiba | ||||||||||||
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T2N7002BK,LM(T
Toshiba America Electronic Components
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$0.0404 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 400 mA | 1.75 Ω | 1.3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-PDSO-G3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | unknown | EAR99 | Toshiba | SMALL OUTLINE, R-PDSO-G3 | ||||||||||||||
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SSM3K15AFS,LF(B
Toshiba America Electronic Components
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$0.0430 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 30 V | 1 | 100 mA | 6 Ω | 6.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 mW | 100 mW | SWITCHING | SILICON | R-PDSO-G3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | unknown | EAR99 | 8541.21.00.95 | Toshiba | ||||||||||
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SSM3K15AFU,LF(T
Toshiba America Electronic Components
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$0.0459 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 30 V | 1 | 100 mA | 6 Ω | 6.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 mW | SWITCHING | SILICON | R-PDSO-G3 | 1 | 150 °C | 260 | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | unknown | EAR99 | Toshiba | , | ||||||||||||
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SSM3K15AMFV,L3F(T
Toshiba America Electronic Components
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$0.0525 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 30 V | 1 | 100 mA | 6 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-F3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | TOSHIBA CORP | unknown | EAR99 | Toshiba | ROHS COMPLIANT, VESM, 2-1L1B, 3 PIN | |||||||||||||||
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SSM3K7002KFU,LF(T
Toshiba America Electronic Components
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$0.0545 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 400 mA | 1.75 Ω | 1.3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 700 mW | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | unknown | EAR99 | Toshiba | , | |||||||||||||
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SSM3K37MFV,L3F
Toshiba America Electronic Components
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$0.0719 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 20 V | 1 | 250 mA | 2.2 Ω | 4.1 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 mW | SWITCHING | SILICON | R-PDSO-F3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | TOSHIBA CORP | unknown | EAR99 | Toshiba | ||||||||||||||
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T2N7002AK,LM
Toshiba America Electronic Components
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$0.0719 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 200 mA | 4.7 Ω | 0.7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-PDSO-G3 | 1 | 150 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | compliant | Toshiba | SOT-23, 3 PIN | ||||||||||||
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NTA7002NT1G
onsemi
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$0.0723 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 30 V | 1 | 154 mA | 7.5 Ω | 6 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ONSEMI | compliant | EAR99 | 8541.21.00.95 | onsemi | SC-75, 3 PIN | SC-75 (SOT-416) 3 LEAD | 3 | 463-01 | ||||
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2N7002WT1G
onsemi
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$0.0734 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 310 mA | 1.6 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 330 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | compliant | EAR99 | 8541.21.00.40 | onsemi | PACKAGE-3 | SC-70 (SOT-323) 3 LEAD | 3 | 419-04 |