Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE Sorted By: Risk Rank
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DTM3A25P20NFDB-7
Diodes Incorporated
$0.2493 Yes Active N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 20 V 1 630 mA 0.4 mΩ 5.37 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.47 W SWITCHING SILICON S-PDSO-N6 e4 150 °C -55 °C 260 DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE NICKEL PALLADIUM GOLD NO LEAD DUAL DIODES INC U-DFN2020-6 compliant EAR99 8541.29.00.95
CMLM7387
Central Semiconductor Corp
Check for Price Active N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 50 V 1 160 mA 4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-F6 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL CENTRAL SEMICONDUCTOR CORP HALOGEN FREE, PICOMINI-6 compliant EAR99 6
CMLM7388
Central Semiconductor Corp
Check for Price Active N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 50 V 1 160 mA 4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-F6 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL CENTRAL SEMICONDUCTOR CORP HALOGEN FREE, PICOMINI-6 compliant EAR99 6
DMB53D0UV-7
Diodes Incorporated
Check for Price Yes Yes Obsolete 100 mA N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 50 V 1 200 160 mA 4 Ω HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON 300 mV R-PDSO-F6 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT DUAL DIODES INC GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 compliant EAR99 6
DMB53D0UDW-7
Diodes Incorporated
$0.1788 Yes Yes Obsolete 100 mA N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 50 V 1 200 160 mA 4 Ω HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON 300 mV R-PDSO-G6 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 compliant EAR99 6
MCH6935
SANYO Electric Co Ltd
Check for Price Transferred 700 mA N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 30 V 1 200 150 mA 3.7 Ω METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 550 mW SWITCHING SILICON R-PDSO-F6 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL SANYO ELECTRIC CO LTD SMALL OUTLINE, R-PDSO-F6 unknown EAR99 6
DMB54D0UDW-7
Diodes Incorporated
$0.1386 Yes Yes Obsolete 100 mA N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 50 V 1 220 160 mA 4 Ω ESD PROTECTION, LOW THRESHOLD METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON 400 mV R-PDSO-G6 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC GREEN, PLASTIC, ULTRA SMALL, 6 PIN compliant EAR99 6
CMLM7387TR
Central Semiconductor Corp
Check for Price No Active N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 50 V 1 160 mA 4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW SWITCHING SILICON R-PDSO-F6 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL CENTRAL SEMICONDUCTOR CORP HALOGEN FREE, PICOMINI-6 not_compliant EAR99 6
CMLM7388TR
Central Semiconductor Corp
Check for Price No Active N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 6 50 V 1 160 mA 4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW SWITCHING SILICON R-PDSO-F6 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL CENTRAL SEMICONDUCTOR CORP HALOGEN FREE, PICOMINI-6 not_compliant EAR99 6
TPCP8F01
Toshiba America Electronic Components
Check for Price No No Not Recommended 3 A N-CHANNEL YES SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 8 20 V 1 100 3 A 3 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON R-PDSO-F8 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP SMALL OUTLINE, R-PDSO-F8 unknown EAR99 8