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BSC0924NDIATMA1
Infineon Technologies AG
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$0.8900 | No | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 1.3 A | 7 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDSO-N8 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-N6 | not_compliant | EAR99 | Infineon | ||||||||||||||||
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FDMS3660S
onsemi
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$1.0864 | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 30 V | 2 | 13 A | 8 mΩ | 70 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | SWITCHING | SILICON | MO-240AA | R-PDSO-F6 | e3 | 1 | 150 °C | 260 | 30 | DRAIN SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | ONSEMI | QFN-8 | not_compliant | EAR99 | onsemi | 483AJ | |||||||||||
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FDMC8200
onsemi
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$0.7156 | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 8 A | 20 mΩ | 30 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.9 W | 40 A | SWITCHING | SILICON | 66 ns | 30 ns | S-PDSO-N8 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN SOURCE | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Nickel/Gold/Palladium (Ni/Au/Pd) | NO LEAD | DUAL | ONSEMI | 3 X 3 MM, ROHS COMPLIANT, MLP, 8 PIN | compliant | EAR99 | onsemi | 511DE | ||||||||
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FDMC8200S
onsemi
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$0.7047 | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 6 A | 20 mΩ | 30 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | SWITCHING | SILICON | S-PDSO-N8 | e4 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN SOURCE | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | NO LEAD | DUAL | ONSEMI | 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | compliant | EAR99 | onsemi | 511DE | |||||||||||
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FDMC7200S
onsemi
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$0.4772 | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 7 A | 22 mΩ | 30 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | S-PDSO-N8 | e4 | 1 | 150 °C | 260 | 30 | DRAIN SOURCE | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | NO LEAD | DUAL | ONSEMI | 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | compliant | EAR99 | onsemi | 511DE | |||||||||||||
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FDMS7620S
onsemi
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$0.8020 | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 30 V | 2 | 10.1 mA | 31 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | SWITCHING | SILICON | R-PDSO-N6 | e4 | 1 | 150 °C | 260 | 30 | DRAIN SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | NO LEAD | DUAL | ONSEMI | ROHS COMPLIANT, POWER 56, 8 PIN | compliant | EAR99 | onsemi | 506DR | |||||||||||||
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FDMS3669S
onsemi
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$0.5938 | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 30 V | 2 | 13 A | 10 mΩ | 55 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | 2.5 W | SWITCHING | SILICON | MO-240AA | R-PDSO-F6 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | ONSEMI | QFN-8 | not_compliant | EAR99 | onsemi | 483AJ | 8541.29.00.95 | ||||||||
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FDMC7200
onsemi
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$0.3964 | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 6 A | 23.5 mΩ | 30 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.2 W | SWITCHING | SILICON | S-PDSO-N8 | e4 | 1 | 150 °C | 260 | 30 | DRAIN SOURCE | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | NO LEAD | DUAL | ONSEMI | 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | compliant | EAR99 | onsemi | 511DE | ||||||||||||
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BSC0911NDATMA1
Infineon Technologies AG
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$1.2307 | No | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 25 V | 2 | 2.2 A | 4.8 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | SILICON | R-PDSO-N8 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-N6 | not_compliant | EAR99 | Infineon | ||||||||||||||
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BSC0923NDIATMA1
Infineon Technologies AG
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$1.1835 | No | Yes | Active | N-CHANNEL | YES | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 10 A | 7 mΩ | 9 mJ | 49 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | SWITCHING | SILICON | R-PDSO-N8 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | , | not_compliant | EAR99 | Infineon | 8541.29.00.95 |