Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount Configuration (1)

SEPERATE, 3 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

2 hits Apply

Drain Current-Max (ID) (2)

4.5 A 1 5.6 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (2)

28 mΩ 1 40 mΩ 1

Min (Ω) - Max (Ω)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PDSO-G28 2

2 hits Apply

Manufacturer (1)

Temic Semiconductors 2

2 hits Apply

Number of Elements (1)

3 2

2 hits Apply

Number of Terminals (1)

28 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 1

2 hits Apply

1.5 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply