Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Configuration: SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR Sorted By: Risk Rank
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NTND31015NZTAG
onsemi
$0.0789 Yes Active N-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 20 V 2 200 mA 1.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 mW SWITCHING SILICON R-PBCC-N6 e4 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD BOTTOM ONSEMI 713AC compliant EAR99 onsemi
SSM6N16FU
Toshiba America Electronic Components
Check for Price Yes Active N-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 20 V 2 100 mA 4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON R-PDSO-G6 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TOSHIBA CORP unknown EAR99 2-2J1C, 6 PIN 6
SSM6N16FE
Toshiba America Electronic Components
Check for Price Yes Active N-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 20 V 2 100 mA 4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 mW SWITCHING SILICON R-PDSO-F6 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP unknown EAR99 2-2N1D, 6 PIN 6
SSM6N09FU
Toshiba America Electronic Components
Check for Price Yes Active N-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 30 V 2 400 mA 1.7 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G6 Not Qualified 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TOSHIBA CORP unknown EAR99 2-2J1C, US6, 6 PIN 6
HUFA76504DK8T
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 8 80 V 2 2.5 A 200 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON MS-012AA R-PDSO-G8 e3 COMMERCIAL 1 260 NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ROCHESTER ELECTRONICS LLC unknown
NTND31225CZTAG
onsemi
Check for Price Yes Active N-CHANNEL AND P-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 20 V 2 220 mA 1.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 mW SWITCHING SILICON R-PBCC-N6 e4 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD BOTTOM ONSEMI 713AC compliant EAR99 onsemi
NTND31200PZTAG
onsemi
Check for Price Yes Active P-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 20 V 2 127 mA 5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 mW SWITCHING SILICON R-PBCC-N6 e4 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER NICKEL PALLADIUM GOLD NO LEAD BOTTOM ONSEMI compliant EAR99
NTND1K5N021ZTAG
onsemi
Check for Price Yes Active N-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 23 V 2 200 mA 1.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 mW SWITCHING SILICON R-PBCC-N6 e4 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER NICKEL PALLADIUM GOLD NO LEAD BOTTOM ONSEMI compliant EAR99
HN1K02FU
Toshiba America Electronic Components
Check for Price End Of Life N-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 20 V 2 50 mA 40 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON R-PDSO-G6 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL TOSHIBA CORP unknown EAR99 SMALL OUTLINE, R-PDSO-G6 6
HN1K03FU
Toshiba America Electronic Components
Check for Price End Of Life N-CHANNEL YES SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 20 V 2 100 mA 12 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G6 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL TOSHIBA CORP unknown EAR99 SMALL OUTLINE, R-PDSO-G6 6