Parametric results for: 2n7000 under Small Signal Field-Effect Transistors
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2N7334-QR-BR1
TT Electronics Resistors
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Check for Price | Yes | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | e1 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN SILVER COPPER | THROUGH-HOLE | DUAL | TT ELECTRONICS PLC | HERMETIC SEALED PACKAGE-14 | compliant | EAR99 | |||||||||||
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2N7334R1
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | e1 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN SILVER COPPER | THROUGH-HOLE | DUAL | SEMELAB LTD | IN-LINE, R-PDIP-T14 | compliant | EAR99 | 14 | |||||||||
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IRFG110-JQR-BR1
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | e1 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN SILVER COPPER | THROUGH-HOLE | DUAL | SEMELAB LTD | IN-LINE, R-PDIP-T14 | compliant | EAR99 | 14 | |||||||||
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2N7334-QR-B
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | No | No | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | SEMELAB LTD | IN-LINE, R-PDIP-T14 | compliant | EAR99 | 14 | |||||||||
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IRHG597110PBF
Infineon Technologies AG
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Check for Price | Yes | Active | P-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 960 mA | 960 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | MO-036AB | R-CDIP-T14 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, CERAMIC PACKAGE-14 | compliant | EAR99 | |||||||||||
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IRFQ110R4
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 28 | 100 V | 4 | 1 A | 800 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | S-CQCC-N28 | e4 | Not Qualified | 150 °C | CERAMIC, METAL-SEALED COFIRED | SQUARE | CHIP CARRIER | GOLD | NO LEAD | QUAD | SEMELAB LTD | CHIP CARRIER, S-CQCC-N28 | compliant | EAR99 | 28 | LCC | ||||||||
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IRFG110-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | No | No | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | SEMELAB LTD | IN-LINE, R-PDIP-T14 | compliant | EAR99 | 14 | |||||||||
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SD5400CY
Linear Integrated Systems
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Check for Price | Yes | No | Active | N-CHANNEL | YES | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 20 V | 4 | 50 mA | 75 Ω | 0.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G14 | Not Qualified | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | LINEAR INTEGRATED SYSTEMS INC | SOIC-14 | compliant | EAR99 | 14 | SOT | ||||||
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IRFG110R1
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | e1 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN SILVER COPPER | THROUGH-HOLE | DUAL | SEMELAB LTD | IN-LINE, R-PDIP-T14 | compliant | EAR99 | 14 | |||||||||
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IRHG597110
Infineon Technologies AG
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Check for Price | No | Active | P-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 960 mA | 960 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.4 W | SWITCHING | SILICON | MO-036AB | R-CDIP-T14 | e0 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | DUAL | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, CERAMIC PACKAGE-14 | not_compliant | EAR99 |