Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Sorted By: Risk Rank
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2N7002DW-7-F
Diodes Incorporated
$0.1145 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 115 mA 7.5 Ω HIGH RELIABILITY 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON R-PDSO-G6 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC 6 compliant EAR99
BSS84DW-7-F
Diodes Incorporated
$0.0770 Yes Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 50 V 2 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G6 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC 6 compliant EAR99 8541.21.00.95
BSS84DWQ-7
Diodes Incorporated
$0.1203 Yes Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 50 V 2 130 mA 10 Ω HIGH RELIABILITY 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G6 e3 AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99
2N7002DW
onsemi
$0.1846 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 115 mA 7.5 Ω 7 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON R-PDSO-G6 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI compliant EAR99 SC70, 6 PIN 419B-02 onsemi
2N7002DW-TP
Micro Commercial Components
$0.1388 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 340 mA 3 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SILICON R-PDSO-G6 e3 Not Qualified 1 150 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL MICRO COMMERCIAL COMPONENTS CORP 6 compliant EAR99 SMALL OUTLINE, R-PDSO-G6
DMN63D8LDW-7
Diodes Incorporated
$0.0800 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 30 V 2 220 mA 4.5 Ω HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G6 e3 AEC-Q101 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99
NTZD3154NT1G
onsemi
$0.1620 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 20 V 2 540 mA 550 mΩ 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON R-PDSO-F6 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL ONSEMI 6 compliant EAR99 1.60 X 1.60 MM, LEAD FREE, CASE 463A-01, 6 PIN 463A-01 onsemi SOT-563, 6 LEAD
BSD235CH6327XTSA1
Infineon Technologies AG
$0.2094 Yes Yes Active N-CHANNEL AND P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 20 V 2 950 mA 350 mΩ AVALANCHE RATED METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON R-PDSO-G6 e3 AEC-Q101 1 NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 SMALL OUTLINE, R-PDSO-G6 Infineon
PJX138K_R1_00001
PanJit Semiconductor
$0.0764 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 50 V 2 350 mA 1.6 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 223 mW SWITCHING SILICON R-PDSO-F6 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL PANJIT INTERNATIONAL INC compliant EAR99 GREEN, PLASTIC PACKAGE-6 PANJIT
BSS8402DWQ-7
Diodes Incorporated
Check for Price Yes Yes Active N-CHANNEL AND P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 115 mA 7.5 Ω HIGH RELIABILITY 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G6 e3 AEC-Q101 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 GREEN, PLASTIC PACKAGE-6