Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
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DMN65D8LDW-7
Diodes Incorporated
$0.0494 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 150 mA 8 Ω HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON R-PDSO-G6 e3 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC 6 compliant EAR99
2N7002KDW-AU_R1_000A1
PanJit Semiconductor
$0.0533 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 115 mA 3 Ω ULTRA LOW RESISTANCE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G6 AEC-Q101 NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL PANJIT INTERNATIONAL INC compliant EAR99 GREEN, PLASTIC PACKAGE-6 PANJIT
DMG1016UDWQ-7
Diodes Incorporated
$0.0552 Yes Yes Not Recommended N-CHANNEL AND P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 20 V 2 1.066 A 450 mΩ HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 330 mW 330 mW SWITCHING SILICON R-PDSO-G6 e3 AEC-Q101 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC 6 compliant EAR99 SOT-363, 6 PIN 8541.21.00.95
DMG6302UDW-7
Diodes Incorporated
$0.0580 Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 25 V 1 140 mA 10 Ω 1.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 380 mW SWITCHING SILICON R-PDSO-G6 e3 MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC compliant
DMN63D1LV-7
Diodes Incorporated
$0.0626 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 550 mA 2 Ω HIGH RELIABILITY 2.9 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 940 mW SWITCHING SILICON R-PDSO-F6 e3 AEC-Q101; MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) FLAT DUAL DIODES INC compliant EAR99
DMN63D8LDWQ-7
Diodes Incorporated
$0.0647 Yes Yes Not Recommended N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 30 V 2 220 mA 4.5 Ω 2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON R-PDSO-G6 e3 AEC-Q101; IATF 16949; MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC compliant
DMN67D8LDW-7
Diodes Incorporated
$0.0659 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 230 mA 5 Ω 2.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 410 mW SWITCHING SILICON R-PDSO-G6 e3 MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC compliant EAR99
DMN3401LDW-7
Diodes Incorporated
$0.0721 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 30 V 2 800 mA 400 mΩ 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW SWITCHING SILICON R-PDSO-G6 e3 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC compliant EAR99
PJT7603_R1_00001
PanJit Semiconductor
$0.0725 Yes Active N-CHANNEL AND P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 50 V 2 400 mA 1.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G6 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL PANJIT INTERNATIONAL INC compliant EAR99 GREEN, PLASTIC PACKAGE-6
DMN63D1LDW-7
Diodes Incorporated
$0.0733 Yes Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 250 mA 2 Ω 2.9 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 390 mW SWITCHING SILICON R-PDSO-G6 e3 MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC compliant EAR99