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1 - 10 of 3,031 results
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DMN65D8LDW-7
Diodes Incorporated
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$0.0494 | Yes | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 150 mA | 8 Ω | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | 6 | compliant | EAR99 | |||||||||
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2N7002KDW-AU_R1_000A1
PanJit Semiconductor
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$0.0533 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 115 mA | 3 Ω | ULTRA LOW RESISTANCE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | AEC-Q101 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | PANJIT INTERNATIONAL INC | compliant | EAR99 | GREEN, PLASTIC PACKAGE-6 | PANJIT | ||||||||||||
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DMG1016UDWQ-7
Diodes Incorporated
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$0.0552 | Yes | Yes | Not Recommended | N-CHANNEL AND P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 20 V | 2 | 1.066 A | 450 mΩ | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 330 mW | 330 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | 6 | compliant | EAR99 | SOT-363, 6 PIN | 8541.21.00.95 | ||||
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DMG6302UDW-7
Diodes Incorporated
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$0.0580 | Yes | Active | P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 25 V | 1 | 140 mA | 10 Ω | 1.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 380 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | |||||||||||
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DMN63D1LV-7
Diodes Incorporated
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$0.0626 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 550 mA | 2 Ω | HIGH RELIABILITY | 2.9 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 940 mW | SWITCHING | SILICON | R-PDSO-F6 | e3 | AEC-Q101; MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | FLAT | DUAL | DIODES INC | compliant | EAR99 | |||||||||
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DMN63D8LDWQ-7
Diodes Incorporated
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$0.0647 | Yes | Yes | Not Recommended | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 30 V | 2 | 220 mA | 4.5 Ω | 2 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | AEC-Q101; IATF 16949; MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | ||||||||||
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DMN67D8LDW-7
Diodes Incorporated
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$0.0659 | Yes | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 230 mA | 5 Ω | 2.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 410 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | EAR99 | |||||||||
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DMN3401LDW-7
Diodes Incorporated
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$0.0721 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 30 V | 2 | 800 mA | 400 mΩ | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | EAR99 | |||||||||||
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PJT7603_R1_00001
PanJit Semiconductor
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$0.0725 | Yes | Active | N-CHANNEL AND P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 50 V | 2 | 400 mA | 1.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | PANJIT INTERNATIONAL INC | compliant | EAR99 | GREEN, PLASTIC PACKAGE-6 | ||||||||||||||||||
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DMN63D1LDW-7
Diodes Incorporated
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$0.0733 | Yes | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 250 mA | 2 Ω | 2.9 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 390 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | EAR99 |