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Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Configuration: COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE Sorted By: Risk Rank
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SD5200N
 Calogic Inc 		Check for Price No No Active N-CHANNEL NO COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 16 30 V 4 50 mA 80 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDIP-T16 Not Qualified 85 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE DUAL CALOGIC LLC compliant EAR99 8541.21.00.95
SD5400CYSOIC14LROHS
 Linear Integrated Systems 		Check for Price Yes Contact Manufacturer N-CHANNEL YES COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 14 20 V 4 50 mA 75 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW 500 mW SWITCHING SILICON R-PDSO-G14 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL LINEAR INTEGRATED SYSTEMS INC compliant EAR99 SMALL OUTLINE, R-PDSO-G14
SD5000J
 Universal Semiconductor Inc 		Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 16 20 V 4 50 mA 70 Ω LOW INSERTION LOSS 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-GDIP-T16 Not Qualified 85 °C CERAMIC, GLASS-SEALED RECTANGULAR IN-LINE THROUGH-HOLE DUAL UNIVERSAL SEMICONDUCTOR INC unknown EAR99 IN-LINE, R-GDIP-T16 DIP 16
SD5000J
 Teledyne Technologies Inc 		Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 16 20 V 4 50 mA 70 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-CDIP-T16 Not Qualified 85 °C CERAMIC, METAL-SEALED COFIRED RECTANGULAR IN-LINE THROUGH-HOLE DUAL TELEDYNE COMPONENTS unknown EAR99 IN-LINE, R-CDIP-T16
SD5000N
 Teledyne Technologies Inc 		Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 16 20 V 4 50 mA 70 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDIP-T16 Not Qualified 85 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE DUAL TELEDYNE COMPONENTS unknown EAR99 IN-LINE, R-PDIP-T16
SD5400CY
 Teledyne Technologies Inc 		Check for Price Obsolete N-CHANNEL YES COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 14 20 V 4 50 mA 70 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G14 Not Qualified 70 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TELEDYNE COMPONENTS unknown EAR99
SD5001J
 Teledyne Technologies Inc 		Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 16 10 V 4 50 mA 70 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-CDIP-T16 Not Qualified 85 °C CERAMIC, METAL-SEALED COFIRED RECTANGULAR IN-LINE THROUGH-HOLE DUAL TELEDYNE COMPONENTS unknown EAR99 IN-LINE, R-CDIP-T16
SD5001N
 Teledyne Technologies Inc 		Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 16 10 V 4 50 mA 70 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDIP-T16 Not Qualified 85 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE DUAL TELEDYNE COMPONENTS unknown EAR99
SD5001N
 Universal Semiconductor Inc 		Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 16 10 V 4 50 mA 70 Ω LOW INSERTION LOSS 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW SWITCHING SILICON R-PDIP-T16 Not Qualified 85 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE DUAL UNIVERSAL SEMICONDUCTOR INC unknown EAR99 PLASTIC, DIP-16 DIP 16
SD5001J
 Universal Semiconductor Inc 		Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 16 10 V 4 50 mA 70 Ω LOW INSERTION LOSS 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-GDIP-T16 Not Qualified 85 °C CERAMIC, GLASS-SEALED RECTANGULAR IN-LINE THROUGH-HOLE DUAL UNIVERSAL SEMICONDUCTOR INC unknown EAR99 IN-LINE, R-GDIP-T16 DIP 16
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