Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

Filter Your Search

1 - 7 of 7 results

|
-
-
Configuration: COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE
Select parts from the table below to compare.
Compare
Compare
DMC25D1UVT-7
Diodes Incorporated
$0.2822 Yes Active N-CHANNEL AND P-CHANNEL YES COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 12 V 2 3.9 A 55 mΩ HIGH RELIABILITY 3.3 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W SWITCHING SILICON R-PDSO-G6 e3 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC TSOT-26, 6 PIN compliant EAR99
UPA68HK
NEC Electronics America Inc
Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE 7 2 30 mA JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PSIP-T7 Not Qualified 125 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE NEC ELECTRONICS AMERICA INC unknown EAR99
UPA68HN
NEC Electronics America Inc
Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE 7 2 30 mA JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PSIP-T7 Not Qualified 125 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE NEC ELECTRONICS AMERICA INC unknown EAR99
DMC25D1UVT-13
Diodes Incorporated
Check for Price Yes Active N-CHANNEL AND P-CHANNEL YES COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 12 V 2 3.9 A 55 mΩ HIGH RELIABILITY 3.3 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W SWITCHING SILICON R-PDSO-G6 e3 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC SMALL OUTLINE, R-PDSO-G6 compliant EAR99
UPA68H
NEC Electronics America Inc
Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE 7 2 30 mA JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PSIP-T7 Not Qualified 125 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE NEC ELECTRONICS AMERICA INC unknown EAR99
UPA68HL
NEC Electronics America Inc
Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE 7 2 30 mA JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PSIP-T7 Not Qualified 125 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE NEC ELECTRONICS AMERICA INC unknown EAR99
UPA68HM
NEC Electronics America Inc
Check for Price Obsolete N-CHANNEL NO COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE 7 2 30 mA JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PSIP-T7 Not Qualified 125 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE NEC ELECTRONICS AMERICA INC unknown EAR99