Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Configuration: COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE Sorted By: Risk Rank
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AP0420NA
Microchip Technology Inc
Check for Price No Active P-CHANNEL NO COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 18 200 V 8 15 mA 600 Ω GATE PROTECTED 3.2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.5 W AMPLIFIER SILICON R-PDIP-T18 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE DUAL MICROCHIP TECHNOLOGY INC compliant
AP0140WG
Microchip Technology Inc
Check for Price No Active P-CHANNEL YES COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 20 400 V 8 15 mA 700 Ω 2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.4 W AMPLIFIER SILICON R-PDSO-G20 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL MICROCHIP TECHNOLOGY INC compliant PLASTIC, SO-20
AP0120ND
Microchip Technology Inc
Check for Price No Active P-CHANNEL YES COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 17 200 V 8 15 mA 600 Ω 2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON S-XUUC-N17 e0 Not Qualified 85 °C UNSPECIFIED SQUARE UNCASED CHIP TIN LEAD NO LEAD UPPER MICROCHIP TECHNOLOGY INC compliant DIE-17
AN0116NA
Microchip Technology Inc
Check for Price No Active N-CHANNEL NO COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 18 160 V 8 30 mA 350 Ω 1.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.5 W AMPLIFIER SILICON R-PDIP-T18 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE DUAL MICROCHIP TECHNOLOGY INC compliant PLASTIC, DIP-18
AN0440WG
Microchip Technology Inc
Check for Price No Active N-CHANNEL YES COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 20 400 V 8 30 mA 350 Ω GATE PROTECTED 2.4 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.4 W AMPLIFIER SILICON R-PDSO-G20 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL MICROCHIP TECHNOLOGY INC compliant
AP0130ND
Microchip Technology Inc
Check for Price No Active P-CHANNEL YES COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 17 300 V 8 15 mA 600 Ω 2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE AMPLIFIER SILICON S-XUUC-N17 e0 Not Qualified 85 °C UNSPECIFIED SQUARE UNCASED CHIP TIN LEAD NO LEAD UPPER MICROCHIP TECHNOLOGY INC compliant DIE-17
AN0140WG
Microchip Technology Inc
Check for Price No Active N-CHANNEL YES COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 20 400 V 8 30 mA 350 Ω 1.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.4 W AMPLIFIER SILICON R-PDSO-G20 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL MICROCHIP TECHNOLOGY INC compliant PLASTIC, SO-20
AP0416NA
Microchip Technology Inc
Check for Price No Active P-CHANNEL NO COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 18 160 V 8 15 mA 700 Ω GATE PROTECTED 3.2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.5 W AMPLIFIER SILICON R-PDIP-T18 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE DUAL MICROCHIP TECHNOLOGY INC compliant
AN0130NA
Microchip Technology Inc
Check for Price No Active N-CHANNEL NO COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 18 300 V 8 30 mA 300 Ω 1.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.5 W AMPLIFIER SILICON R-PDIP-T18 e0 Not Qualified 85 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE DUAL MICROCHIP TECHNOLOGY INC compliant PLASTIC, DIP-18
AP0130NA
Microchip Technology Inc
Check for Price No Active P-CHANNEL NO COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 18 300 V 8 15 mA 600 Ω 2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.5 W AMPLIFIER SILICON R-PDIP-T18 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE DUAL MICROCHIP TECHNOLOGY INC compliant PLASTIC, DIP-18