Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

GATE PROTECTED 52

104 hits Apply

Configuration (1)

COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 104

104 hits Apply

DS Breakdown Voltage-Min (5)

160 V 24 200 V 16 300 V 16 320 V 24 400 V 24

Min (V) - Max (V)

104 hits Apply

Drain Current-Max (ID) (3)

15 mA 52 25 mA 10 30 mA 42

Min (A) - Max (A)

104 hits Apply

Drain-source On Resistance-Max (4)

300 Ω 16 350 Ω 36 600 Ω 16 700 Ω 36

Min (Ω) - Max (Ω)

104 hits Apply

METAL-OXIDE SEMICONDUCTOR 104

104 hits Apply

1.5 pF 26 2 pF 26 2.4 pF 26 3.2 pF 26

Min (pF) - Max (pF)

104 hits Apply

R-PDIP-T18 40 R-PDSO-G20 24 S-XUUC-N16 20 S-XUUC-N17 20

104 hits Apply

e0 104

104 hits Apply

Manufacturer (2)

Microchip Technology Inc 52 Supertex Inc 52

104 hits Apply

Number of Elements (1)

8 104

104 hits Apply

Number of Terminals (4)

16 20 17 20 18 40 20 24

104 hits Apply

ENHANCEMENT MODE 104

104 hits Apply

85.0 °C 5 125.0 °C 5 150.0 °C 94

Min (°C) - Max (°C)

104 hits Apply

PLASTIC/EPOXY 64 UNSPECIFIED 40

104 hits Apply

RECTANGULAR 64 SQUARE 40

104 hits Apply

IN-LINE 40 SMALL OUTLINE 24 UNCASED CHIP 40

104 hits Apply

Active 52 Obsolete 52

104 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 52 P-CHANNEL 52

104 hits Apply

1.4 W 12 1.5 W 20

Min (W) - Max (W)

104 hits Apply

1.4 W 24 1.5 W 40

Min (W) - Max (W)

104 hits Apply

Surface Mount (2)

NO 40 YES 64

104 hits Apply