Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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Configuration: COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE
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SD5100CHP
Universal Semiconductor Inc
Check for Price Obsolete N-CHANNEL YES COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 9 30 V 4 50 mA 70 Ω LOW INSERTION LOSS 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-XUUC-N9 Not Qualified UNSPECIFIED RECTANGULAR UNCASED CHIP NO LEAD UPPER UNIVERSAL SEMICONDUCTOR INC UNCASED CHIP, R-XUUC-N9 unknown EAR99
ISB-A27-0
SANYO Electric Co Ltd
Check for Price Obsolete N-CHANNEL YES COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 9 30 V 4 150 mA 11 Ω METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 330 mW SWITCHING SILICON S-XBGA-B9 Not Qualified 125 °C SOURCE UNSPECIFIED SQUARE GRID ARRAY BALL BOTTOM SANYO ELECTRIC CO LTD GRID ARRAY, S-XBGA-B9 unknown EAR99 9
SD5101CHP
Universal Semiconductor Inc
Check for Price Obsolete N-CHANNEL YES COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 9 15 V 4 50 mA 70 Ω LOW INSERTION LOSS 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-XUUC-N9 Not Qualified UNSPECIFIED RECTANGULAR UNCASED CHIP NO LEAD UPPER UNIVERSAL SEMICONDUCTOR INC UNCASED CHIP, R-XUUC-N9 unknown EAR99
SD5100CY
Microchip Technology Inc
Check for Price Obsolete N-CHANNEL YES COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 14 30 V 4 50 mA 70 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G14 Not Qualified 85 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TELEDYNE COMPONENTS SMALL OUTLINE, R-PDSO-G14 unknown EAR99
SD5101N
Universal Semiconductor Inc
Check for Price Obsolete N-CHANNEL NO COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 14 15 V 4 50 mA 70 Ω LOW INSERTION LOSS 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDIP-T14 Not Qualified PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE DUAL UNIVERSAL SEMICONDUCTOR INC IN-LINE, R-PDIP-T14 unknown EAR99 14 DIP
SD5100N
Universal Semiconductor Inc
Check for Price Obsolete N-CHANNEL NO COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 14 30 V 4 50 mA 70 Ω LOW INSERTION LOSS 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDIP-T14 Not Qualified PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE DUAL UNIVERSAL SEMICONDUCTOR INC IN-LINE, R-PDIP-T14 unknown EAR99 14 DIP
SD5101CY
Teledyne Technologies Inc
Check for Price Obsolete N-CHANNEL YES COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 14 15 V 4 50 mA 70 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G14 Not Qualified 85 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TELEDYNE COMPONENTS SMALL OUTLINE, R-PDSO-G14 unknown EAR99
VN2222N6
Supertex Inc
Check for Price No No Transferred N-CHANNEL NO COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 20 220 V 4 900 mA 7.5 Ω 35 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-CDIP-T20 e0 Not Qualified CERAMIC, METAL-SEALED COFIRED RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE DUAL SUPERTEX INC IN-LINE, R-CDIP-T20 compliant EAR99 20 DIP
SD5101N
Teledyne Technologies Inc
Check for Price Obsolete N-CHANNEL NO COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 14 15 V 4 50 mA 70 Ω 0.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDIP-T14 Not Qualified 85 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE DUAL TELEDYNE COMPONENTS IN-LINE, R-PDIP-T14 unknown EAR99
VN2222N6
Microchip Technology Inc
Check for Price Active N-CHANNEL NO COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 20 220 V 4 900 mA 7.5 Ω 35 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-CDIP-T20 e0 Not Qualified NOT SPECIFIED NOT SPECIFIED CERAMIC, METAL-SEALED COFIRED RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE DUAL MICROCHIP TECHNOLOGY INC CERAMIC, DIP-20 compliant EAR99