Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW INSERTION LOSS 12

13 hits Apply

Configuration (1)

COMMON GATE, 4 ELEMENTS WITH BUILT-IN DIODE 13

13 hits Apply

DS Breakdown Voltage-Min (3)

10 V 4 15 V 4 20 V 5

Min (V) - Max (V)

13 hits Apply

Drain Current-Max (ID) (1)

50 mA 13

13 hits Apply

Drain-source On Resistance-Max (1)

70 Ω 13

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

0.5 pF 13

13 hits Apply

R-PDIP-T16 3 R-PDSO-G14 4 X-XUUC-N16 6

13 hits Apply

e3 2

13 hits Apply

Manufacturer (1)

Calogic Inc 13

13 hits Apply

Number of Elements (1)

4 13

13 hits Apply

Number of Terminals (2)

14 4 16 9

13 hits Apply

ENHANCEMENT MODE 13

13 hits Apply

85.0 °C 13

13 hits Apply

PLASTIC/EPOXY 7 UNSPECIFIED 6

13 hits Apply

RECTANGULAR 7 UNSPECIFIED 6

13 hits Apply

IN-LINE 3 SMALL OUTLINE 4 UNCASED CHIP 6

13 hits Apply

Active 8 Obsolete 5

13 hits Apply

No 6 Yes 1

13 hits Apply

NOT SPECIFIED 5

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

500 mW 4

13 hits Apply

Surface Mount (2)

NO 3 YES 10

13 hits Apply