Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 3

13 hits Apply

Configuration (1)

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE 13

13 hits Apply

DS Breakdown Voltage-Min (2)

30 V 10 55 V 3

Min (V) - Max (V)

13 hits Apply

Drain Current-Max (ID) (3)

160 mA 3 2.9 A 4 3 A 6

Min (A) - Max (A)

13 hits Apply

Drain-source On Resistance-Max (4)

3 mΩ 3 90 mΩ 1 115 mΩ 4 160 mΩ 5

Min (Ω) - Max (Ω)

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

40 pF 2

13 hits Apply

R-PDIP-T17 1 R-PDSO-F17 1 R-PDSO-G16 10 R-PDSO-G17 1

13 hits Apply

e0 1 e3 2

13 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 9 IXYS Corporation 3 Rochester Electronics LLC 1

13 hits Apply

1 2

13 hits Apply

Number of Elements (1)

6 13

13 hits Apply

Number of Terminals (2)

16 10 17 3

13 hits Apply

ENHANCEMENT MODE 13

13 hits Apply

150.0 °C 5 175.0 °C 3

Min (°C) - Max (°C)

13 hits Apply

PLASTIC/EPOXY 13

13 hits Apply

RECTANGULAR 13

13 hits Apply

IN-LINE 1 SMALL OUTLINE 12

13 hits Apply

Active 1 Obsolete 9 Transferred 3

13 hits Apply

Yes 4

13 hits Apply

260 1 NOT SPECIFIED 3

13 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 3 N-CHANNEL AND P-CHANNEL 10

13 hits Apply

2.5 W 2

13 hits Apply

Surface Mount (2)

NO 1 YES 12

13 hits Apply