Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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2N7002,215
Nexperia
$0.0516 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 3 SOT23 compliant EAR99 8541.21.00.95 1995-04-01 Nexperia
2N7002,235
Nexperia
Check for Price Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 3 SOT23 compliant 2017-02-17 Nexperia
2N7002/HAMR
Nexperia
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 3 SOT23 compliant Nexperia SOT-23, 3 PIN