Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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VN2410L-G
Microchip Technology Inc
$0.8611 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 10 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC CYLINDRICAL, O-PBCY-T3 compliant EAR99 8541.29.00.95 Microchip
VN2410L-GP005
Microchip Technology Inc
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 10 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC CYLINDRICAL, O-PBCY-T3 compliant EAR99
VN2410L-GP003
Microchip Technology Inc
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 10 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC CYLINDRICAL, O-PBCY-T3 compliant EAR99
VN2410L-GP002
Microchip Technology Inc
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 10 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC CYLINDRICAL, O-PBCY-T3 compliant EAR99
VN2410L-GP013
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 10 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e3 PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC CYLINDRICAL, O-PBCY-T3 compliant EAR99 8541.29.00.95
VN2410L-GP014
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 10 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC CYLINDRICAL, O-PBCY-T3 compliant EAR99 8541.29.00.95
VN2410LG
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 200 mA 10 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e1 COMMERCIAL 260 40 PLASTIC/EPOXY ROUND CYLINDRICAL TIN SILVER COPPER THROUGH-HOLE BOTTOM ROCHESTER ELECTRONICS LLC LEAD FREE, CASE 29-11, 3 PIN unknown TO-92 3 CASE 29-11
VN2410LZL1G
Rochester Electronics LLC
Check for Price No Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 200 mA 10 Ω EUROPEAN PART NUMBER 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e1 COMMERCIAL 260 40 PLASTIC/EPOXY ROUND CYLINDRICAL TIN SILVER COPPER THROUGH-HOLE BOTTOM ROCHESTER ELECTRONICS LLC LEAD FREE, CASE 29-11, 3 PIN unknown TO-92 3 CASE 29-11
VN2410LZL1
Rochester Electronics LLC
Check for Price No No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 200 mA 10 Ω EUROPEAN PART NUMBER 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e0 COMMERCIAL 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL TIN LEAD THROUGH-HOLE BOTTOM ROCHESTER ELECTRONICS LLC CASE 29-11, 3 PIN unknown TO-92 3 CASE 29-11
VN2410L
Rochester Electronics LLC
Check for Price No No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 200 mA 10 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e0 COMMERCIAL 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL TIN LEAD THROUGH-HOLE BOTTOM ROCHESTER ELECTRONICS LLC CASE 29-11, 3 PIN unknown TO-92 3 CASE 29-11