Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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VN2406L-G
Microchip Technology Inc
$1.3698 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 6 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC GREEN PACKAGE-3 compliant EAR99 8541.29.00.95 Microchip
VN2406L-G
Supertex Inc
$0.7360 Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 6 Ω HIGH INPUT IMPEDANCE 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM SUPERTEX INC CYLINDRICAL, O-PBCY-T3 compliant EAR99 TO-92 3
VN2406L-GP003
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 6 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99
VN2406L-GP013
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 6 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99
VN2406L-GP005
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 6 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99
VN2406L-GP002
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 6 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99
VN2406L-GP014
Microchip Technology Inc
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 6 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99
VN2406M
Rochester Electronics LLC
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 190 mA 6 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-237AA O-PBCY-W3 COMMERCIAL DRAIN PLASTIC/EPOXY ROUND CYLINDRICAL NOT SPECIFIED WIRE BOTTOM ROCHESTER ELECTRONICS LLC TO-237, 3 PIN unknown TO-237AA 3
VN2406L
Motorola Mobility LLC
Check for Price Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 200 mA 6 Ω 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW 1 W SWITCHING SILICON TO-226AA O-PBCY-T3 e0 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL Tin/Lead (Sn/Pb) THROUGH-HOLE BOTTOM MOTOROLA INC CYLINDRICAL, O-PBCY-T3 unknown EAR99 8541.21.00.95
VN2406LZL1
Motorola Mobility LLC
Check for Price Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 240 V 1 200 mA 6 Ω EUROPEAN PART NUMBER 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW SWITCHING SILICON TO-92 O-PBCY-T3 Not Qualified PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM MOTOROLA INC CYLINDRICAL, O-PBCY-T3 unknown EAR99 8541.21.00.95