Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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SI2323DDS-T1-GE3
Vishay Intertechnologies
$0.3799 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 5.3 A 39 mΩ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.7 W SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC TO-236, SOT-23, 3 PIN compliant EAR99 Vishay
SI2323DS-T1-GE3
Vishay Siliconix
$0.3861 Yes Yes Not Recommended P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.7 A 39 mΩ 140 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY SILICONIX SMALL OUTLINE, R-PDSO-G3 unknown EAR99 Vishay SOT-23 3
SI2323DS-T1-E3
Vishay Intertechnologies
$0.4758 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.7 A 39 mΩ 140 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC TO-236, SOT-23, 3 PIN compliant Vishay
SI2323CDS-T1-GE3
Vishay Intertechnologies
$0.4997 Yes Not Recommended P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 6 A 39 mΩ 135 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC TO-236, SOT-23, 3 PIN compliant Vishay
SI2323CDS-T1-BE3
Vishay Intertechnologies
Check for Price Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 6 A 39 mΩ 135 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC TO-236, SOT-23, 3 PIN compliant Vishay
SI2323DS-T1
Vishay Siliconix
Check for Price No Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.7 A 39 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL VISHAY SILICONIX TO-236, 3 PIN compliant EAR99 Vishay SOT-23 3
SI2323DS-T1-BE3
Vishay Intertechnologies
Check for Price Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.7 A 39 mΩ 140 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC TO-236, SOT-23, 3 PIN compliant Vishay
SI2323DDS-T1-BE3
Vishay Intertechnologies
Check for Price Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 5.3 A 39 mΩ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.7 W SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL VISHAY INTERTECHNOLOGY INC TO-236, SOT-23, 3 PIN compliant Vishay