Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 12

14 hits Apply

DS Breakdown Voltage-Min (1)

30 V 11

14 hits Apply

Drain-source On Resistance-Max (1)

125 Ω 12

14 hits Apply

JUNCTION 14

14 hits Apply

TO-236AB 4

14 hits Apply

R-PDSO-G3 12

14 hits Apply

e0 1 e3 6

14 hits Apply

Manufacturer (4)

North American Philips Discrete Products Div 1 NXP Semiconductors 9 Philips Semiconductors 1 YAGEO Corporation 3

14 hits Apply

1 2

14 hits Apply

Number of Elements (1)

1 12

14 hits Apply

Number of Terminals (1)

3 12

14 hits Apply

DEPLETION MODE 12

14 hits Apply

150.0 °C 9

14 hits Apply

PLASTIC/EPOXY 12

14 hits Apply

RECTANGULAR 12

14 hits Apply

SMALL OUTLINE 12

14 hits Apply

Obsolete 12 Transferred 2

14 hits Apply

Yes 3

14 hits Apply

260 4

14 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 14

14 hits Apply

300 mW 5

14 hits Apply

Surface Mount (1)

YES 14

14 hits Apply