Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 10

11 hits Apply

DS Breakdown Voltage-Min (1)

20 V 10

11 hits Apply

Drain Current-Max (ID) (2)

1 A 6 1.3 A 4

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (2)

180 mΩ 6 220 mΩ 3

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

11 hits Apply

TO-236 3 TO-236AB 7

11 hits Apply

R-PDSO-G3 10

11 hits Apply

e0 5 e3 6

11 hits Apply

Manufacturer (2)

onsemi 7 Rochester Electronics LLC 4

11 hits Apply

1 6 NOT SPECIFIED 3

11 hits Apply

Number of Elements (1)

1 10

11 hits Apply

Number of Terminals (1)

3 10

11 hits Apply

ENHANCEMENT MODE 10

11 hits Apply

150.0 °C 5

11 hits Apply

PLASTIC/EPOXY 10

11 hits Apply

RECTANGULAR 10

11 hits Apply

SMALL OUTLINE 10

11 hits Apply

Active 5 Obsolete 6

11 hits Apply

No 2 Yes 5

11 hits Apply

235 3 240 2 260 6

11 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 10

11 hits Apply

400 mW 5

11 hits Apply

Surface Mount (1)

YES 10

11 hits Apply