Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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MGSF1N03LT1G
onsemi
$0.3018 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 1.6 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 420 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 3 318-08 compliant EAR99 onsemi
MGSF1N03LT1
onsemi
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 1.6 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 420 mW SWITCHING SILICON TO-236 R-PDSO-G3 e0 Not Qualified 1 150 °C 235 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Lead (Sn/Pb) GULL WING DUAL ON SEMICONDUCTOR SOT-23 (TO-236) 3 LEAD 3 318 not_compliant EAR99 onsemi SMALL OUTLINE, R-PDSO-G3
MGSF1N03LT3G
onsemi
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 1.6 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 420 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL ON SEMICONDUCTOR SOT-23 (TO-236) 3 LEAD 3 318 compliant EAR99 onsemi SMALL OUTLINE, R-PDSO-G3