Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

7 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

7 hits Apply

Drain Current-Max (ID) (1)

3 A 5

7 hits Apply

Drain-source On Resistance-Max (1)

83 mΩ 5

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

7 hits Apply

R-PDSO-F3 5

7 hits Apply

e6 3

7 hits Apply

Manufacturer (3)

onsemi 3 SANYO Electric Co Ltd 1 SANYO Semiconductor Co Ltd 3

7 hits Apply

1 3

7 hits Apply

Number of Elements (1)

1 5

7 hits Apply

Number of Terminals (1)

3 5

7 hits Apply

ENHANCEMENT MODE 5

7 hits Apply

150.0 °C 4

7 hits Apply

PLASTIC/EPOXY 5

7 hits Apply

RECTANGULAR 5

7 hits Apply

SMALL OUTLINE 5

7 hits Apply

End Of Life 1 Obsolete 3 Transferred 3

7 hits Apply

Yes 3

7 hits Apply

260 2 NOT SPECIFIED 1

7 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

7 hits Apply

1 W 4

7 hits Apply

Surface Mount (1)

YES 5

7 hits Apply