Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 7 HIGH RELIABILITY, ULTRA-LOW RESISTANCE 1

12 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 12

12 hits Apply

DS Breakdown Voltage-Min (1)

30 V 12

12 hits Apply

Drain Current-Max (ID) (1)

1.2 A 12

12 hits Apply

Drain-source On Resistance-Max (1)

250 mΩ 12

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

15 pF 1

12 hits Apply

TO-236AB 12

12 hits Apply

R-PDSO-G3 12

12 hits Apply

e0 3 e3 7

12 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 International Rectifier 8

12 hits Apply

1 9

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

3 12

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

150.0 °C 10

12 hits Apply

-55.0 °C 4

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

RECTANGULAR 12

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SMALL OUTLINE 12

12 hits Apply

Active 2 Obsolete 7 Transferred 3

12 hits Apply

No 3 Yes 4

12 hits Apply

245 2 260 7 NOT SPECIFIED 1

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

340 mW 3 540 mW 1

Min (W) - Max (W)

12 hits Apply

280 mW 1 540 mW 9

Min (W) - Max (W)

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply