Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

Filter Your Search

1 - 5 of 5 results

|
-
-
-
-
Select parts from the table below to compare.
Compare
Compare
DMG1012UWQ-7
Diodes Incorporated
$0.0634 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 950 mA 450 mΩ 7 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 610 mW SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101; IATF 16949; MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC compliant
DMG1012T-7
Diodes Incorporated
$0.0827 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 630 mA 400 mΩ 5.37 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 280 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant 3 EAR99
DMG1012TQ-7
Diodes Incorporated
$0.0937 Yes Yes Not Recommended N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 630 mA 400 mΩ HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 280 mW SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99
DMG1012UW-7
Diodes Incorporated
$0.1016 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 1 A 450 mΩ HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 290 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified AEC-Q101 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant 3 EAR99
DMG1012T-13
Diodes Incorporated
$0.1016 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 630 mA 400 mΩ 5.37 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 280 mW SWITCHING SILICON R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 2018-05-08