Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

23 hits Apply

Configuration (2)

SINGLE 7 SINGLE WITH BUILT-IN DIODE 16

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DS Breakdown Voltage-Min (2)

80 V 22 100 V 1

Min (V) - Max (V)

23 hits Apply

Drain Current-Max (ID) (2)

175 mA 22 190 mA 1

Min (A) - Max (A)

23 hits Apply

Drain-source On Resistance-Max (1)

10 Ω 23

23 hits Apply

METAL-OXIDE SEMICONDUCTOR 23

23 hits Apply

6 pF 14 10 pF 1

Min (pF) - Max (pF)

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R-PDSO-G3 23

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e0 1 e3 10

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Manufacturer (5)

Diodes Incorporated 3 Nexperia 3 NXP Semiconductors 11 YAGEO Corporation 3 Zetex / Diodes Inc 3

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1 11

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Number of Elements (1)

1 23

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Number of Terminals (1)

3 23

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ENHANCEMENT MODE 23

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150.0 °C 12

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-65.0 °C 1

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PLASTIC/EPOXY 23

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RECTANGULAR 23

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SMALL OUTLINE 23

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Active 1 Not Recommended 1 Obsolete 11 Transferred 10

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Yes 4

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235 1 260 7

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Polarity/Channel Type (1)

N-CHANNEL 23

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300 mW 5

23 hits Apply

Surface Mount (1)

YES 23

23 hits Apply