Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 8

12 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 10

12 hits Apply

DS Breakdown Voltage-Min (1)

250 V 8

12 hits Apply

Drain Current-Max (ID) (3)

300 mA 4 350 mA 1 375 mA 4

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (3)

5 Ω 4 6 Ω 2 7 Ω 2

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

12 hits Apply

15 pF 4

12 hits Apply

R-PDSO-G4 10

12 hits Apply

e3 10

12 hits Apply

Manufacturer (3)

Nexperia 2 NXP Semiconductors 8 YAGEO Corporation 2

12 hits Apply

1 10

12 hits Apply

Number of Elements (1)

1 10

12 hits Apply

Number of Terminals (1)

4 10

12 hits Apply

ENHANCEMENT MODE 8

12 hits Apply

150.0 °C 5

12 hits Apply

PLASTIC/EPOXY 10

12 hits Apply

RECTANGULAR 10

12 hits Apply

SMALL OUTLINE 10

12 hits Apply

Active 3 Obsolete 3 Transferred 6

12 hits Apply

Yes 4

12 hits Apply

260 4

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

12 hits Apply

1.5 W 3

12 hits Apply

Surface Mount (1)

YES 10

12 hits Apply