Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

15 hits Apply

DRAIN 15

15 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 15

15 hits Apply

DS Breakdown Voltage-Min (1)

200 V 15

15 hits Apply

Drain Current-Max (ID) (2)

550 mA 13 650 mA 2

Min (A) - Max (A)

15 hits Apply

Drain-source On Resistance-Max (2)

2 Ω 2 2.5 Ω 13

Min (Ω) - Max (Ω)

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 15

15 hits Apply

R-PDSO-G4 15

15 hits Apply

e3 7

15 hits Apply

Manufacturer (3)

Nexperia 3 NXP Semiconductors 10 YAGEO Corporation 2

15 hits Apply

1 7

15 hits Apply

Number of Elements (1)

1 15

15 hits Apply

Number of Terminals (1)

4 15

15 hits Apply

ENHANCEMENT MODE 15

15 hits Apply

150.0 °C 9

15 hits Apply

PLASTIC/EPOXY 15

15 hits Apply

RECTANGULAR 15

15 hits Apply

SMALL OUTLINE 15

15 hits Apply

Active 3 Not Recommended 1 Obsolete 6 Transferred 5

15 hits Apply

Yes 4

15 hits Apply

260 5 NOT SPECIFIED 2

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 15

15 hits Apply

1.5 W 2

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply