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Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

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BSH111,215
 NXP Semiconductors 		Check for Price Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 335 mA 4 Ω FAST SWITCHING 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS TO-236 PLASTIC PACKAGE-3 3 SOT23 compliant EAR99 8541.29.00.75 NXP
BSH111,235
 Nexperia 		Check for Price Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 335 mA 4 Ω FAST SWITCHING 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 PLASTIC PACKAGE-3 3 SOT23 compliant EAR99 Nexperia 2017-02-01
BSH111BK
 Nexperia 		Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 210 mA 4 Ω 7 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA compliant EAR99 Nexperia 2017-02-17
BSH111,215
 Nexperia 		Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 335 mA 4 Ω FAST SWITCHING 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 PLASTIC PACKAGE-3 3 SOT23 compliant EAR99 8541.29.00.75 Nexperia 2017-02-01
BSH111
 Nexperia 		Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 335 mA 4 Ω FAST SWITCHING 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA PLASTIC PACKAGE-3 compliant EAR99 Nexperia 2017-02-01
BSH111
 NXP Semiconductors 		Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 335 mA 4 Ω FAST SWITCHING 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NXP SEMICONDUCTORS SOT-23 PLASTIC PACKAGE-3 3 compliant EAR99 NXP
BSH111,235
 NXP Semiconductors 		Check for Price Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 335 mA 4 Ω FAST SWITCHING 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS TO-236 PLASTIC PACKAGE-3 3 SOT23 compliant EAR99 8541.29.00.75
BSH111BK
 NXP Semiconductors 		Check for Price Transferred NXP SEMICONDUCTORS unknown EAR99
934056036215
 NXP Semiconductors 		Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 335 mA 4 Ω FAST SWITCHING 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS SOT-23 PLASTIC, SMD, SST3, 3 PIN 3 unknown EAR99
934056036235
 NXP Semiconductors 		Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 55 V 1 335 mA 4 Ω FAST SWITCHING 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS SOT-23 PLASTIC, SMD, SST3, 3 PIN 3 unknown EAR99