Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 32 SINGLE WITH BUILT-IN DIODE 30

62 hits Apply

DS Breakdown Voltage-Min (1)

60 V 62

62 hits Apply

Drain Current-Max (ID) (1)

400 mA 62

62 hits Apply

Drain-source On Resistance-Max (2)

2 Ω 31 3 Ω 31

Min (Ω) - Max (Ω)

62 hits Apply

METAL-OXIDE SEMICONDUCTOR 62

62 hits Apply

5 pF 30

62 hits Apply

TO-92 51

62 hits Apply

O-PBCY-T3 62

62 hits Apply

e0 2 e1 4 e3 2

62 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 24 National Semiconductor Corporation 12 onsemi 2 Rochester Electronics LLC 1 Texas Instruments 23

62 hits Apply

NOT APPLICABLE 1

62 hits Apply

Number of Elements (1)

1 62

62 hits Apply

Number of Terminals (1)

3 62

62 hits Apply

ENHANCEMENT MODE 62

62 hits Apply

150.0 °C 29

62 hits Apply

PLASTIC/EPOXY 62

62 hits Apply

ROUND 62

62 hits Apply

CYLINDRICAL 62

62 hits Apply

Active 3 Obsolete 54 Transferred 5

62 hits Apply

No 1 Yes 3

62 hits Apply

NOT APPLICABLE 1

62 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 62

62 hits Apply

625 mW 7

62 hits Apply

Surface Mount (1)

NO 62

62 hits Apply