Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

EUROPEAN PART NUMBER 24

153 hits Apply

Configuration (1)

SINGLE 152

153 hits Apply

DS Breakdown Voltage-Min (1)

25 V 90

153 hits Apply

Drain Current-Max (ID) (1)

100 mA 90

153 hits Apply

Drain-source On Resistance-Max (3)

35 Ω 18 50 Ω 18 65 Ω 18

Min (Ω) - Max (Ω)

153 hits Apply

JUNCTION 150 METAL-OXIDE SEMICONDUCTOR 2

153 hits Apply

TO-226AA 54 TO-92 82

153 hits Apply

O-PBCY-T3 108 O-PBCY-W3 44

153 hits Apply

e0 2 e1 2 e3 1

153 hits Apply

Manufacturer (8)

Allegro MicroSystems LLC 54 Fairchild Semiconductor Corporation 1 Micro Electronics Corporation 3 Micro Electronics Ltd 2 Motorola Mobility LLC 45 Motorola Semiconductor Products 45 onsemi 1 Rochester Electronics LLC 2

153 hits Apply

NOT APPLICABLE 2

153 hits Apply

Number of Elements (1)

1 152

153 hits Apply

Number of Terminals (1)

3 152

153 hits Apply

DEPLETION MODE 150 ENHANCEMENT MODE 2

153 hits Apply

150.0 °C 8

153 hits Apply

PLASTIC/EPOXY 152

153 hits Apply

ROUND 152

153 hits Apply

CYLINDRICAL 152

153 hits Apply

Active 2 Obsolete 151

153 hits Apply

Yes 2

153 hits Apply

NOT APPLICABLE 2

153 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 152

153 hits Apply

250 mW 1 260 mW 2 300 mW 4 625 mW 1

Min (W) - Max (W)

153 hits Apply

Surface Mount (1)

NO 152

153 hits Apply