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2n7000

Transistors

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Drain Current-Max (ID)
210 mA
Polarity/Channel Type
Risk Rank
2.85
9.66

2.85 - 9.66

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15 results found

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  Base Number X
Manufacturer Part Number
Composite Price X Stock X Description X Package Code X Pin Count X Risk Rank X FET Technology X Polarity/Channel Type X Surface Mount X Configuration X Operating Mode X JESD-30 Code X Package Body Material X Package Shape X Terminal Form X Terminal Position X Package Style X Number of Elements X Number of Terminals X Transistor Element Material X DS Breakdown Voltage-Min X Drain-source On Resistance-Max X Drain Current-Max (ID) X Qualification Status X Pulsed Drain Current-Max (IDM) X Operating Temperature-Max X Terminal Finish X Transistor Application X Time@Peak Reflow Temperature-Max (s) X Peak Reflow Temperature (Cel) X Distributor X Case Connection X Subcategory X Drain Current-Max (Abs) (ID) X Power Dissipation-Max (Abs) X JEDEC-95 Code X Avalanche Energy Rating (Eas) X JESD-609 Code X Additional Feature X Power Dissipation Ambient-Max X Moisture Sensitivity Level X Turn-on Time-Max (ton) X Turn-off Time-Max (toff) X Reference Standard X Feedback Cap-Max (Crss) X Collector Current-Max (IC) X Highest Frequency Band X Power Gain-Min (Gp) X VCEsat-Max X Collector-Emitter Voltage-Max X DC Current Gain-Min (hFE) X Rise Time-Max (tr) X Fall Time-Max (tf) X
  2N7000 private Component
2N7000
Unisonic Technologies Co Ltd
View and download datasheet
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private
private °C
private
private
private A
private W
  2N7000/E7 private Component
2N7000/E7
Vishay Intertechnologies
View and download datasheet
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private
private °C
private
private
private A
private W
  H2N7000 private Component
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private
private °C
private
private A
private W
  2N7000T/R private Component
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private
private °C
private
Tin/Lead (Sn/Pb) available
Matte Tin (Sn) available
private
private
private A
private W
private
  2N7000KL-TR1 private Component
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private
private °C
private
private
private A
private W
  2N7000KL-TR1-E3 private Component
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private
private °C
private
Tin/Lead (Sn/Pb) available
Matte Tin (Sn) available
private
private
private A
private W
private
private
  2N7000KLE3 private Component
2N7000KLE3
Vishay Intertechnologies
View and download datasheet
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private
private °C
private
Tin/Lead (Sn/Pb) available
Matte Tin (Sn) available
private
private A
private W
private
private
  2N7000-S00Z private Component
2N7000-S00Z
Fairchild Semiconductor Corporation
View and download datasheet
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private
private °C
private
private A
private W
  X2N7000 private Component
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
private
private
private
private
private °C
private
private A
private W
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