Parametric results for: 2n7000 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Configuration (1)

SINGLE 1

1 hit Apply

Drain Current-Max (ID) (1)

200 mA 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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Manufacturer (1)

Sipex Corporation 1

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Number of Elements (1)

1 1

1 hit Apply

ENHANCEMENT MODE 1

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150.0 °C 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

400 mW 1

1 hit Apply