Parametric results for: 2n7000 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

Drain Current-Max (ID) (2)

75 mA 1 200 mA 1

Min (A) - Max (A)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Manufacturer (2)

HSMC Corporation 1 Shantou Huashan Electronic Devices Co Ltd 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

Contact Manufacturer 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

400 mW 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply