Parametric results for: RF Small Signal Field-Effect Transistors

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PMBFJ310,215
NXP Semiconductors
$0.1080 Yes Obsolete N-CHANNEL YES SINGLE 3 25 V VERY HIGH FREQUENCY BAND 1 LOW NOISE 2.5 pF JUNCTION DEPLETION MODE 250 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS TO-236 PLASTIC PACKAGE-3 3 SOT23 compliant 8541.21.00.75 NXP
MMBF5484
Fairchild Semiconductor Corporation
$0.1086 Yes Yes Transferred N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 1 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SOT-23 SOT-23, 3 PIN 3 3LD, SOT23, JEDEC TO-236, LOW PROFILE compliant 8541.21.00.95 EAR99
MMBFJ211
Fairchild Semiconductor Corporation
$0.1101 Yes Yes Transferred N-CHANNEL YES SINGLE 3 VERY HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SOT-23 3 3LD, SOT23, JEDEC TO-236, LOW PROFILE compliant 8541.21.00.95 EAR99
MMBF4416
Fairchild Semiconductor Corporation
$0.1120 Yes Yes Transferred N-CHANNEL YES SINGLE 3 VERY HIGH FREQUENCY BAND 1 18 dB 0.9 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SOT-23 SOT-23, 3 PIN 3 3LD, SOT23, JEDEC TO-236, LOW PROFILE compliant 8541.21.00.95 EAR99
MMBFJ309LT1G
onsemi
$0.1149 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant onsemi EAR99
MMBF4416A
Fairchild Semiconductor Corporation
$0.1261 Yes Yes Transferred N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 0.8 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SOT-23 SOT-23, 3 PIN 3 3LD, SOT23, JEDEC TO-236, LOW PROFILE compliant 8541.21.00.95 EAR99
MMBFJ310
Fairchild Semiconductor Corporation
$0.1317 Yes Yes Transferred N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SOT-23 SOT-23, 3 PIN 3 3LD, SOT23, JEDEC TO-236, LOW PROFILE compliant 8541.21.00.95 EAR99
BF256B
onsemi
$0.1350 Yes Active N-CHANNEL NO SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 350 mW AMPLIFIER SILICON TO-92 O-PBCY-T3 e3 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM ONSEMI 135AN compliant onsemi EAR99
MMBFJ310LT1G
onsemi
$0.1398 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant onsemi EAR99
MMBF5484
onsemi
$0.1458 Yes Active N-CHANNEL YES SINGLE 3 1 1 pF JUNCTION DEPLETION MODE 225 mW 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI 318-08 compliant 8541.21.00.95 onsemi EAR99